ELECTRICAL TRANSPORT PROPERTIES AND PHOTOLUMINESCENCE OF LATTICE-MATCHED INAS0.91SB0.09 ON GASB GROWN BY LIQUID-PHASE EPITAXY

摘要

Liquid-phase epitaxy has been successfully used to grow lattice-matched InAs0.91Sb0.09 on GaSb substrates with good electrical transport characteristics. The electron concentrations for undoped n-InAs0.91Sb0.09 samples were found to be in the range (1-4) x 10(17) cm(-3). The Hall electron mobilities are high (11 700 cm(2) V-1 s(-1) at 77 K and 8800 cm(2) V-1 s(-1) at 300 K) for undoped InAs0.91Sb0.09 samples. The mobility data have been analysed taking into account the appropriate scattering mechanisms. The effects of zinc doping on the carrier concentrations and mobilities were also investigated together with the photoluminescence emission spectra. References: 55