Compositional control of PbTiO3thin films by plasma enhanced metalorganic chemical vapor deposition

摘要

PbTiO3thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(Ohyphen;ihyphen;C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3thin films was intensively influenced by the input flow rate ratio of precursors while it was independent of the deposition temperatures. Ashyphen;deposited PECVD PbTiO3thin film showed a uniform distribution of the Pb, Ti, and C component throughout the bulk of film. When an annealing process was performed at 750thinsp;deg;C under the O2ambient for 1 h, the Pb/(Pb+Ti) ratio of thin films was reduced from 0.567 to 0.509.