AbstractIntermodulation distortion in transistors operating between 1 and 2 GHz has been studied. Four sources of nonlinearity in the transistor were examined and characterized by polynomials which were expressed in terms of the voltages at the transistor junctions. By incorporating these nonlinearities into a linear model, a nonlinear UHF transistor model was derived. The nodal equations of this nonlinear model were successively solved by expressing each nodal voltage in terms of a Volterra series expansion of the input voltage. Based on this analysis, predictions of the intermodulation distortions in two types of transistor were made; these predictions compared favourably with meansurements.
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