Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects

摘要

Boron was implanted into silicon at a wafer temperature of 950thinsp;deg;C. The resulting boron profile showed a marked uphill diffusion at the surface and a very high diffusion enhancement. Initially homogeneously distributed antimony atoms showed remarkable redistribution effects after the implantation. These experiments allow the validation of diffusion theories, including the effects of point defect gradients on the migration of dopants. It will be shown that the experimental results agree well with the predictions of pair diffusion theories.