Selectively doped doublehyphen;heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser

摘要

A new type of laser structure which utilizes the selectively doped doublehyphen;heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDHhyphen;LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.