The onhyphen;state in chalcogenide threshold switches

摘要

The onhyphen;state of the chalcogenide glass threshold switch is analyzed on experimental results which call for thin freehyphen;carrier spacehyphen;charge regions at the electrodes. Carriers are assumed to tunnel through the corresponding barriers which are, in turn, maintained by the joint action of the electron and hole flow. The calculated voltagehyphen;current relationship is in excellent agreement with observations.