Effect of Mobile Charge Carriers on Junction Potential Distribution, Field Distribution and Capacitance

摘要

Effect of mobile charge carriers (electrons and holes) in the depletion region on junction potential distribution, field distribution and capacitance has been studied. Close upper and lower bounds for potential and field functions have been found. It is found that the peak field and potential in the junction are less than those calculated by usual complete depletion approximation. The complete depletion approximation becomes a better approximation as the quantity K={ND#x2014;NA/2ni} exp(#x2014;qV/2kT) increases. It is also found that for small values of K i.e. high values of forward bias the capacitance calculated by complete depletion approximation is in serious error. However at large values of K the approximation gives fairly good estimates of junction capacetance.