Electrical end-point detection during ion beam etching of thin films and multilayers

摘要

We propose the in situ measurement of the sample resistance to control the end-point detection during ion beam etching (IBE). The technical requirements are presented. Models for the time dependence of the resistance during the IBE process are discussed and compared to the results of our measurements on samples with thin films and multilayers which are usual in high-Tcsuperconducting technology.