Observation of HSiCl in a chemical vapor deposition reactor by laserhyphen;excited fluorescence

摘要

Using laserhyphen;excited fluorescence, freehyphen;radical HSiCl has been detected in the gas phase during the chemical vapor deposition of silicon from dichlorosilane. Profiles of the relative HSiCl density were measured at atmospheric and low total pressures. Previous studies of chlorosilane deposition have not considered HSiCl as a possible intermediate species. Therefore, its role in the deposition process must be investigated.