Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition

摘要

Epitaxial thin films of ferroelectric bismuth titanate Bi4Ti3O12have been grown by pulsed laser deposition on singlehyphen;crystal lsqb;100rsqb;thinsp;SrTiO3substrates. Bismuth titanate has a high Curie temperature (675thinsp;deg;C) and saturation polarization values of 4 and 50 mgr;C/cm2along thecandbaxis, respectively. Itsa,blattice parameters allow thinhyphen;film growth on substrates such as SrTiO3, LaAlO3, MgO, etc. These single crystalline films exhibit good quality as evidenced by xhyphen;ray diffraction, Rutherford backscattering, and transmission electron microscopy. Applications for these films include memory devices and optical displays.