A model for the concentration profile of PSUBx/SUBOSUBy/SUBin the interwafer gas phase on phosphorus doping of silicon using a solid planar diffusion source

摘要

A mathematical model for the concentration profile of PxOyin the interwafer gas phase on phosphorus doping of silicon using a solid planar diffusion source has been derived for the case of internal-diffusion control of PxOyemission from the source and short time of contact between the wafers and the streaming gas. The model allows us to evaluate the effects of various process parameters on the doping characteristics. Its predictions for the influence of pressure, temperature and gas flow rate on the sheet resistance uniformity correspond to the experimental results reported in the literature.