Demonstration of β-Gasub2/subOsub3/sub Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85?GW/cmsup2/sup or a 5A/700?V Handling Capabilities

摘要

In this article, we report on demonstrating the first vertical β-Gasub2/subOsub3/sub junction barrier Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to compensate for the dilemma of the forfeit of the p-type β-Gasub2/subOsub3/sub. With this wide-bandgap p-type NiOsubx/sub, β-Gasub2/subOsub3/sub JBS diodes with an area of 100?×?100?italicμ/italicmsup2/sup achieve a breakdown voltage (BV) and specific scon/sc-resistance italicR/italicsubon,sp/sub of 1715?V and 3.45?mΩ·cmsup2/sup, respectively, yielding a Baliga's figure of merit (FOM) of BVsup2/sup/italicR/italicsubon,sp/sub = 0.85?GW/cmsup2/sup, which is the highest direct-current FOM value among all β-Gasub2/subOsub3/sub diodes. Meanwhile, a large size JBS diode with the area of 1?×?1?mmsup2/sup shows a forward current italicIsubF/sub/italic and BV of 5?A/700?V, which is also the best italicIsubF/sub/italic and BV combinations (FOM = 64?MW/cmsup2/sup) among all published results about large-area Gasub2/subOsub3/sub diodes. Dynamic switching characteristics reveal that the diode suffers from a negligible current collapse phenomenon even at a ?600?V and 10sup3/sup?s stress, showing the great promise of implementing p-NiO in the future β-Gasub2/subOsub3/sub power electronic devices.