Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOitalic?/italic-Based Memristors—Part I: Behavioral Model

摘要

Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOsub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"ix/i/sub memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOsub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"ix/i/sub/Au and Pt/TiOsub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"ix/i/sub/Pt memristors.