In this work, we present a novel silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) using beta-Ga2O3 material (beta-SOI-LDMOS) as a wide-bandgap material for enhancing breakdown voltage. Because of the embedded gallium oxide in the drift side, the distribution of the electric field of the beta-SOI-LDMOS is altered, and the depletion region changes. The properties of beta-SOI-LDMOS including breakdown voltage (BV), ON-resistance (R-ON), figure of merit, and floating body and self-heating effects are compared with a conventional SOI-LDMOS (C-SOI-LDMOS). The primary goal in this work is to use an ultra-wide-bandgap material between the gate and drain area on the critical side. The proposed structure shows promising results compared to the C-SOI-LDMOS, and the BV of the beta-SOI-LDMOS is increased to 1202 V as compared with 73 V for the conventional LDMOS structure. The proposed beta-Ga2O3 MOSFET exhibits saturation drain current of 37 mA/mm, with low specific R-ON of 4.7 m Omega cm(2) and a figure of merit (V-BR(2)/R-ON) of 30.7 MW/cm(2).
展开▼
