Electric force microscopy probes the statistics of electric field fluctuations from a sample surface, both through measurement of the noncontact friction exerted on the oscillating charged probe and by determination of the power spectrum of stochastic probe frequency fluctuations, referred to as "jitter." Here we calculate the frequency jitter power spectrum determined over a conducting sample of finite thickness, whose response is characterized by a dielectric function that is wavevector-dependent. These calculations complement previous predictions of the coefficient of noncontact friction in an electric force microscopy measurement for the same model, and also previous predictions of the jitter power spectrum for a dielectric continuum. The inclusion both of a finite sample thickness and a wavevector-dependent dielectric response can significantly enhance the magnitude of the predicted jitter spectrum for a conductor, relative to a simpler model of an infinitely thick dielectric continuum. These calculations provide a baseline prediction of the jitter power spectrum generated by the dynamics of conduction electrons in a metal sample.
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