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机译:Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs
Infineon Technologies Austria AG, Villach, Austria;
University of Padova, Padova, Italy;
KAI GmbH, Villach, AustriaInstitute of Electronics, Graz University of Technology, Graz, Austria;
Stress; HEMTs; MODFETs; Degradation; Logic gates; Wide band gap semiconductors; Transient analysis;