Research Disclosure

摘要

This research disclosure relates to components for a lithographic system. In particular, it may relate to components for an extreme ultraviolet (EUV) lithographic system that comprises an EUV radiation source and a lithographic apparatus. The EUV radiation source may be a laser produced plasma (LPP) radiation source. (Photo)lithography is a process of transferring a pattern to a radiation-sensitive substrate by exposing the substrate to radiation having the pattern. For example, the substrate may comprise a semiconductor wafer coated with a photoresist. Radiation used in a lithographic apparatus may be extreme ultraviolet (EUV). EUV radiation has a wavelength in the range 4-20 nm, for example 13.5 nm.