Growth of epitaxialahyphen;axis andchyphen;axis oriented Sr2RuO4films

摘要

Epitaxial films of Sr2RuO4have been growninsituby pulsed laser deposition on (100) LaAlO3and (100) LaSrGaO4substrates. X‐ray diffraction results show that the films are single domain and growc‐axis oriented on (100) LaAlO3anda‐axis oriented on (100) LaSrGaO4substrates. X‐ray &fgr; scans indicate epitaxial alignment of the film and substrate in‐plane axes in both cases. Resistivity versus temperature measurements reveal that the as‐grownc‐axis oriented films are semiconducting and thea‐axis oriented films are metallic. ©1996 American Institute of Physics.