Electrical Properties of Aluminum Oxide Ceramics Film on a Metal

摘要

The work is devoted to the study of electrical properties (temperature dependences of conductivity, relative dielectric constant, dielectric loss tangent for various frequencies) of an aluminum oxide ceramic film deposited on a metal substrate. The film was created by an original method of electron beam evaporation of a nonconducting target consisting of a compressed alumina powder using a plasma electron source, which is able to reliably operate in the fore-vacuum pressure range (5–100 Pa). Such increased working gas pressure ensures the generation of a dense beam plasma near the target, which neutralizes the charging of a nonconducting target and thereby provides its effective melting and electron beam evaporation.