SFIL appears to have several advantages over comparable compression imprinting techniques for applications that require precision layer-to-layer alignment error measurement. SFIL is capable of high-resolution patterning at room temperature with 2-3 PSI applied pressure. The process uses chemicals that are commercially available for sub- 100nm patterns. We have constructed a tool to run automated SFIL imprinting experiments. Imprint templates, made by standard photomask processes, were treated with a low-surface energy self-assembled monolayer to aid selective release at the template-etch barrier interface. This surface treatment was shown to be quite durable, surviving repeated imprints and multiple aggressive physical cleanings without loss of function. Imprints are made in a low-viscosity, photopolymerizable formulation containing organosilicon precursors. The etch barrier cures with approximately 20-50 mJ/cm{sup}2 of broadband radiation. The SFIL process appears to be self-cleaning. The number and size of imprinted defects resulting from template contamination decreased with each successive imprint; the imprint field was contamination-free after eight imprints. Contamination on the template was observed to be entrained in the polymerized etch barrier. The SFIL multilayer scheme has been successfully applied to the patterning of 6Onm lines with 6:1 aspect ratio, and 8Onm features with 14:1 aspect ratio. Using metal lift-off, we have successfully patterned lOOnm metal lines and spaces and generated a functional micropolarizer array. 250nm features with high-aspect ratio were transferred over 7OOnm topography. The SFIL technology is now being commercialized by Molecular Imprints in Austin, TX [18].
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