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Shell effects on hole-coupled electron transfer dynamics from CdSe/CdS quantum dots to methyl viologen

机译:壳牌对hole-coupled电子转移的影响动力来自CdSe / CdS量子点甲基紫罗碱

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摘要

Electron transfer (ET) dynamics from the 1S(e) electron state in quasi-type II CdSe/CdS core/shell quantum dots (QDs) to adsorbed methyl viologen (MV2+) were measured using femtosecond transient absorption spectroscopy. The intrinsic ET rate k(ET) was determined from the measured average number of ET-active MV2+ per QD, which permits reliable comparisons of variant shell thickness and different hole states. The 1S(e) electron was extracted efficiently from the CdSe core, even for CdS shells up to 20 angstrom thick. The ET rate decayed exponentially from 10(10) to 10(9) s(-1) for increasing CdS shell thicknesses with an attenuation factor beta approximate to 0.13 angstrom(-1). We observed that compared to the ground state exciton 1S(e)1S(3/2) the electron coupled to the 2S(3/2) hot hole state exhibited slower ET rates for thin CdS shells. We attribute this behaviour to an Auger-assisted ET process (AAET), which depends on electron-hole coupling controlled by the CdS shell thickness.
机译:从1 s电子转移(ET)动力学(e)电子政府在quasi-type II CdSe / cd核/壳量子点(量子点)吸附甲基紫罗碱(MV2 +)测量使用飞秒瞬态吸收光谱。等率k (ET)决心从测量平均每个QD ET-active mv方+数量,允许可靠的变体壳比较厚度和不同孔。电子从CdSe提取效率核心,即使对CdS壳20埃厚。10(10)(9)(1)提高cd的壳厚度衰减因子β近似为0.13埃(1)。相对于基态激子1 s (e) 1 s(3/2)电子耦合的2 s (3/2)热孔状态等利率薄上比较慢CdS的外壳。Auger-assisted等过程(AAET),视情况而定在间耦合控制的cd壳厚度。

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