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Modulating the periods and electronic properties of striped moiré superstructures for monolayer WSe2 on Au(100) by varied interface coupling

机译:调制周期和电子性质单层的条纹波纹上层建筑WSe2在非盟(100)通过不同接口耦合

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Moiré superlattices formed by the stacking of two-dimensional (2D) transition metal dichalcogenide lattices on substrate lattices have been reported to imply a crucial effect on the electronic properties of 2D materials (e.g., band gap, doping level) and their physical properties. Herein, we report the direct observation of various striped moiré superstructures for monolayer WSe2 on the Au(100) facet, due to the lattice symmetry difference and relative rotation. The periodicities or the inter-stripe distances for striped superstructures fall in a range of 0–15 nm or 0–3 nm after relatively low or high temperature annealing processes, respectively. The diverse striped moiré superstructures then served as perfect platforms for examining the electronic band gap tunability for monolayer WSe2/Au(100) by using scanning tunneling microscopy/spectroscopy (STM/STS), which increases from ∼1.59 eV to ∼1.90 eV with increasing moiré periods from ∼1.62 to ∼11.58 nm. The coupling strength of monolayer WSe2/Au(100) with various striped patterns is thus proposed to be modulated by the different relative orientations. This work should hereby provide some fundamental references for the domain orientation control, interface coupling strength, and application explorations of two-dimensional layered materials in future electronics and optoelectronics.
机译:波纹超晶格形成的堆积二维(2 d)过渡金属dichalcogenide衬底晶格的晶格已报告暗示一个至关重要的影响二维材料的电子性质(例如,带隙,掺杂水平)和身体属性。观察各种条纹波纹上层建筑为单层WSe2非盟(100)方面,由于晶格对称性和差异相对旋转。inter-stripe距离的条纹上层建筑在一系列0-15 nm或0 - 3纳米后相对较低或高温度退火过程,分别。条纹波纹上层建筑然后担任完美的检查电子平台带隙可调谐性为单层WSe2 /非盟(100)利用扫描隧道显微镜/光谱学(STM / STS),增加从1.59∼∼1.90 eV电动汽车与增加波纹周期从1.62∼∼11.58海里。WSe2 /非盟(100)与各种条纹模式因此提出了调制的不同相对的方向。提供一些基本的参考域定向控制,界面耦合力量,和应用的探索在未来的二维层状材料电子和光电。

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