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首页> 外文期刊>Journal of instrumentation: an IOP and SISSA journal >Radiation damage in silicon photomultipliers exposed to neutron radiation
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Radiation damage in silicon photomultipliers exposed to neutron radiation

机译:暴露于中子辐射的硅光电塑料中的辐射损伤

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摘要

We studied performances of two SiPMs before and after irradiation at the Lubljana reactor. These high density (15 μm cell pitch size) SiPMs were developed by Hamamatsu (in cooperation with the CMS SiPM group) for the CMS HCAL Upgrade Phase I project. The S10943- 4732 is a photosensor selected for the CMS HE HCAL where the SiPMs will be exposed to 2 × 10~(11) n/cm~2 (1 MeV equivalent) for the operation time of the SLHC (integrated luminosity - 5000 fb~(-1). The HD-1015CN SiPM was developed using new Hamamatsu trench technology to reduce optical cross-talk (X-talk) between SiPM cells. Both SiPMs are considered as candidates for the CMS HCAL barrel upgrade. The SiPMs were irradiated with reactor neutrons up to 1MeV equivalent fluence of 2 × 10~(12) n/cm~2 (that corresponds to the maximum integrated neutron fluence in the HCAL barrel for the duration of the SLHC operation).
机译:我们研究了卢布尔雅那反应堆辐照前后两种sipm的性能。 这些高密度(15μM细胞音调大小)是由Hamamatsu(与CMS SIPM组合作)为CMS HCAL升级I期项目开发的。 S10943- 4732是为CMS选择的光传感器,在SLHC的操作时间(集成的亮度-5000 FB)中,将sipms暴露于2×10〜(11)n/cm〜2(1 meV等效) 〜(-1)。使用新的Hamamatsu沟渠技术开发了HD-1015CN SIPM,以减少SIPM细胞之间的光学串扰(X-Talk)。这两种SIPM都被视为CMS HCAL BARREL升级的候选者。SIPMS均被照射。 反应器中子高达1MEV等效的2×10〜(12)N/cm〜2(对应于SLHC操作持续时间的HCAL枪管中最大积分中子通量)。

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