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首页> 外文期刊>Journal of Molecular Structure >The synthesis, current transformer mechanism and structural properties of novel rhodanine-based Al/Bis(Rh)-Ph/p-Si and Al/Bis(Rh)-TPE/p-Si heterojunctions
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The synthesis, current transformer mechanism and structural properties of novel rhodanine-based Al/Bis(Rh)-Ph/p-Si and Al/Bis(Rh)-TPE/p-Si heterojunctions

机译:新型氟硝基Al / BIS(RH)-ph / p-Si和Al / Bis(RH)-TPE / p-Si异质结的合成,电流互感器机理和结构性能

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摘要

In the present study, initially, the new rhodanine-based Bis(Rh)-Ph and Bis(Rh)-TPE were synthesized by a green approach. Following synthesis, Al/Bis(Rh)-Ph/p-Si (D1) and Al/Bis(Rh)-TPE/p-Si (D2) heterojunctions were fabricated by using spin coating method and thermal evaporation technique. The electrical characterizations of fabricated D1 and D2 devices were investigated and compared with each other by using the reverse and forward bias C-V measurements at room temperature and I-V measurements at the three different temperatures and distinct illumination intensities. Additionally, the AFM images of D1 and D2 were examined for surface properties. The crucial parameters such as ideality factor (n), saturation current (I-0) and barrier height (Phi(B) ) of D1 and D2 devices were calculated as 2.72, 4.26 x 10(-10)A, 0.80eV and 1.85, 2.33 x 10(-9)A, 0.76eV, respectively. Rectifier rate (RR) for D2 device is similar to 5.3 times higher than D1. While the ideality factor increased with effect of exposure light, the barrier height decreased. In addition, DFT calculations supported the non-planar structures or propeller structures. The results supported that these devices could be used in optoelectronic applications, especially photodiodes and photo detectors. (C) 2020 Published by Elsevier B.V.
机译:在本研究中,最初采用绿色方法合成了新的罗丹宁基双(Rh)-Ph和双(Rh)-TPE。合成后,采用旋涂法和热蒸发技术制备了Al/Bis(Rh)-Ph/p-Si(D1)和Al/Bis(Rh)-TPE/p-Si(D2)异质结。通过使用室温下的反向和正向偏置C-V测量以及三种不同温度和不同照明强度下的I-V测量,研究并比较了所制备的D1和D2器件的电学特性。此外,还对D1和D2的AFM图像进行了表面性质检查。计算出D1和D2器件的理想因子(n)、饱和电流(I-0)和势垒高度(Phi(B))等关键参数分别为2.72,4.26 x 10(-10)A,0.80eV和1.85,2.33 x 10(-9)A,0.76eV。D2设备的整流速率(RR)类似于D1的5.3倍。理想因子随着曝光光的影响而增加,而屏障高度则降低。此外,DFT计算支持非平面结构或螺旋桨结构。结果表明,这些器件可用于光电应用,尤其是光电二极管和光电探测器。(C) 2020年爱思唯尔公司出版。

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