We have developed a new technology for a low-temperature growth of poly crystalline silicon (pSi) thin films used for a thin film transistor (TFT) which can expect the application to a high performance display, such as a high quality large-sized display, a sheet computer, etc. This new deposition technique is the method that can crystallize a silicon film at lower temperature than that of the conventional method. This p-Si film is performed by the deposition of silicon atoms generated by the high density and low potential silane (SiH{sub}4) gas with the ion beam irradiation. We introduce about the development sitnation of the deposition of p-Si films and the product specification for 600×720mm substrates.
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