Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(ferf-pentoxy)silanol

摘要

Rapid atomic layer deposition (RALD) of SiO2 thin films was achieved using trimethyl-aluminum and tris(tertpentoxy)silanol (TPS) as the catalyst and Si precursor, respectively. A maximum growth rate as high as ~28 nm/cycle was obtained by optimizing the catalyst layer density, whereas the previous reports showed lower values of 12 to 17 nm/cycle [Hausmann et al. Science 2002, 298, 402-406) Burton et al. Chem. Mater. 2008, 20, 7031-7043]. When the growth temperature was increased from 140 to 230 °C, the growth rate was not much reduced and the TPS pulse time showing a saturated growth rate became rather longer. Si-CH3, Si-OH, and Si-H bonds were not detected in infrared spectra from the RALD SiO2 film grown at 230 °C. The film quality could be enhanced substantially by applying a higher growth temperature and an in situ post plasma treatment process.