Fundamental limitations and prospects of semiconductor device applications in millimeter wave radio systems

摘要

The fundamental limitations of cut-off frequency and output power of semiconductor devices in millimeter wave region are analyzed and recommendations on basic materials and design are resulted. The prospects may be expected in quasi-optical arrays and active waveguides as basic conductions. New types of devices, based on resonant tunneling and plasma wave excitation are considered as promising active and nonlinear components for millimeter wave radio systems.