Conductivity of field effect arrays and microwave properties of the structures used in vacuum microelectronics

摘要

The influence of microscopic dimensions and finite conductivity of field effect arrays' components on their microwave properties is considered. It is shown that metallic tips don't vary their properties in microwave and millimeter wave bands. However semiconductor tips lose their ability to amplify electric field (and to emit) at frequencies above cut-off f{sub}(c2), depending on tips' geometry and conductivity. Microwave properties of FEA are analyzed taking in account the fact that skin-layer depth is comparable with gate electrode thickness and the gap gate-substrate.