High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

摘要

Compared with a conventional CMOS-based optoelectronic system, two-dimensional (2D) material-based nonvolatile optoelectronic memory has attracted increasing attention because of its ability to rapidly transform optoelectronic signals, as well as simultaneously store and output signals. However, existing two-dimensional optoelectronic memory cannot meet requirements in performance and cost and so on, and needs urgently to be explored. Here we developed a high-performance nonvolatile MoS2-based optoelectronic memory device based on a MoS2 bilayer grown by a Au catalyst. The device exhibits an excellent performance index of current on/off ratio similar to 8 x 10(4) and retention time similar to 2.2 x 10(4) s. Experimental observations and simulation calculations have revealed that the optoelectronic memory mechanism can be ascribed to defects including S vacancies and disorder of atoms in 2D MoS2 materials.