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Catalytic CVD-growth of array of multiwall carbon nanotubes on initially amorphous film Co-Zr-N-O

机译:最初无定形膜Co-Zr-N-O的多壁碳纳米管阵列催化CVD-生长

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The possibility of formation of arrays of multiwall carbon nanotubes on catalyst-containing amorphous thin film Co-Zr-N-O with low content of Co (similar to 15 at.%) by chemical vapor deposition has been demonstrated. On heating the amorphous alloy crystallizes, whereby the faceted crystal clusters of cobalt are formed on the surface. The rest of the film is cobalt depleted. The growth of CNT occurs on cobalt clusters. When using acetylene at the substrate temperature of 650 degrees C the array of 12 mu m high CNT is formed after 2 min of growing. The diameter of CNT in the array varies in the range 3-11 nm. CNTs with the diameter of 5-8 nm prevail. CNT growth process on a thin film of Co-Zr-N-O is low sensitive to the thickness of the film, making it technically attractive. (C) 2016 Published by Elsevier B.V.
机译:通过化学气相沉积,已经证明了通过化学气相沉积形成含催化剂的无定形薄膜CO-ZR-N-O的含催化剂的无定形薄膜Co-ZR-N-O阵列的多壁碳纳米管阵列的可能性。 在加热非晶合金结晶的情况下,在表面上形成甲钴的刻面晶体簇。 薄膜的其余部分是钴耗尽。 CNT的生长发生在钴簇上。 在650℃的基材温度下使用乙炔时,在生长2分钟后形成12μm高CNT的阵列。 阵列中CNT的直径在3-11nm的范围内变化。 直径为5-8 nm的CNT占上风。 CNT生长过程在CO-ZR-N-O的薄膜上对薄膜的厚度敏感,因此技术上吸引力。 (c)2016年由Elsevier B.V发布。

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