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首页> 外文期刊>The European physical journal. Applied physics >Effects of remanent magnetization on dynamic magnetomechanical and magnetic-sensing characteristics in bi-layer multiferroics
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Effects of remanent magnetization on dynamic magnetomechanical and magnetic-sensing characteristics in bi-layer multiferroics

机译:剩余磁化对双层多法学动态磁能和磁敏特性的影响

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摘要

Influences of remanent magnetization on dynamic magnetomechanical mechanisms in a bi-layer asymmetric magnetoelectric (ME) laminate consisting of lead zirconate titanate and samarium iron alloy has been studied systematically, and the underlying hysteresis physics involved in dynamic magnetomechanical process as well as its magnetic-sensing characteristics was intensively characterized. To appreciate the distinct magnetostriction and ferromagnetism simultaneously in samarium iron alloy, key magnetomechanical parameters of dynamic piezomagnetic coefficient, Young's modulus and mechanical quality factors exhibit hysteresis behaviors under magnetic field application. Consequently, high sensitivity in proposed bi-payer laminate for field detection can be reached without the facilitation of additional bias field. Experimental results show that the ME output has an approximately linear correlation with the applied AC magnetic field, and the low-frequency and the detection limits at 1 kHz and 120 kHz can reach 2.3 x 10(-6) T and 2.2 x 10(-8) T, respectively. These unique features provide such an asymmetric ME composite great potentials for weak magnetic field detection without DC bias field.
机译:系统地研究了由锆非对称碳酸铅和钐铁合金组成的双层不对称磁电(ME)层压板动态磁电机制对动态磁电机制的影响,以及动态磁机械过程中涉及的底层滞后物理及其磁感应特征是强烈的特征。为了在钐铁合金中同时欣赏不同的磁致伸缩和铁磁性,动态压电磁系数的关键磁机械参数,杨氏模量和机械质量因素在磁场应用下表现出滞后行为。因此,可以在没有促进额外偏置场的情况下达到用于场检测的所提出的Bi-Payer层压板中的高灵敏度。实验结果表明,ME输出与应用的交流磁场大致线性相关性,低频和1 kHz的检测限量和120 kHz可以达到2.3×10( - 6)T和2.2 x 10( - 8)分别。这些独特的特征提供了这种不对称的ME复合电位,用于没有直流偏置场的弱磁场检测。

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    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

    Zhengzhou Univ Light Ind Coll Elect &

    Informat Engn Zhengzhou 450002 Henan Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理学;
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