Direct Photopatterning of Solution–Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors—A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides

Sanctis Shawn; Hoffmann Rudolf C.; Bruns Michael; Schneider J?rg J.

摘要

Abstract > Direct photopatterning of indium zinc oxide (IZO) and zinc tin oxide (ZTO) semiconductors is realized using Schiff‐base complexes of indium, zinc, and tin(II) with methoxyiminopropionato ligands as precursors. These precursor complexes are stable under visible light, but they interestingly decompose in the UV region, thereby facilitating a site‐selective photopatterning and its subsequent conversion to the desired amorphous oxides. Thin film transistors (TFTs) with photopatterned IZO and ZTO layers exhibit high performance after post‐annealing at relatively low temperatures between 250 and 350 °C, with charge‐carrier mobilities ( μ <sub>sat</sub> ) of 7.8 and 3.6 cm 2 (V s) ?1 for IZO and ZTO, respectively. The mechanism of the photodecomposition of the precursor films is studied by attenuated total reflectance–Infrared spectroscopy. Apart from the electrical characterization, the resultant UV‐patterned oxide thin films are characterized by transmission electron microscopy micrographs of focussed ion beam (FIB)‐prepared cross sections, atomic force microscopy, as well as Auger depth profiles. X‐ray photoelectron spectroscopy investigations elucidate the influence of surface hydroxylation on the TFT performance. The straightforward approach of facile precursor UV‐photopatterning demonstrates its potential feasibility as a low‐cost method toward integration of such solution–processed oxide films into large‐area electronics. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 用铟，锌和锡（II）的Schiff-Base（II）与甲氧基咪唑酸盐配体作为前体，实现了氧化铟锌（IZO）和氧化锌（ZTO）半导体的直接照射氧化锌（ZTO）半导体。这些前体复合物在可见光下稳定，但它们有趣地分解在UV区域中，从而促进位点选择性的照明者及其随后转化为所需的无定形氧化物。具有PhotoPatterned IZO和ZTO层的薄膜晶体管（TFT）在250到350°C之间的相对低温下进行后退火后的高性能具有充电载波迁移（ μ</ i> <sub> sat </ sub> ）7.8和3.6厘米 2 </ sup> （v s）？1 </ sup> 对于IZO和ZTO。通过减弱的总反射率 - 红外光谱研究了前体膜的光分解的机理。除了电学表征外，所得的UV图案化氧化物薄膜的特征在于聚焦离子束（FIB）的透射电子显微镜显微照片，所述横截面，原子力显微镜以及螺旋钻深层剖面。 X射线光电子能谱研究阐明了表面羟基化对TFT性能的影响。 Bacile PrecileoroOR UV-Photopatterning的直接方法证明了其潜在的可行性，作为将这种溶液加工氧化膜整合到大面积电子器件中的低成本方法。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第15期</span><b style="margin: 0 2px;">|</b><span>共8页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Sanctis Shawn&option=202" target="_blank" rel="nofollow">Sanctis Shawn;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Hoffmann Rudolf C.&option=202" target="_blank" rel="nofollow">Hoffmann Rudolf C.;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Bruns Michael&option=202" target="_blank" rel="nofollow">Bruns Michael;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Schneider J?rg J.&option=202" target="_blank" rel="nofollow">Schneider J?rg J.;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Fachbereich ChemieTechnische Universit?t DarmstadtAlarich‐Weiss‐Stra?e 12 64287 Darmstadt Germany;</p> <p>Fachbereich ChemieTechnische Universit?t DarmstadtAlarich‐Weiss‐Stra?e 12 64287 Darmstadt Germany;</p> <p>Institute for Applied Materials – Energy Storage Systems (IAM‐ESS)Karlsruhe Institute of Technology (KIT)Hermann‐von‐Helmholtz‐Platz 1 D‐76344 Eggenstein‐Leopoldshafen Germany;</p> <p>Fachbereich ChemieTechnische Universit?t DarmstadtAlarich‐Weiss‐Stra?e 12 64287 Darmstadt Germany;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=indium zinc oxide&option=203" rel="nofollow">indium zinc oxide;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=molecular precursors&option=203" rel="nofollow">molecular precursors;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=photopatterning&option=203" rel="nofollow">photopatterning;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=thin film transistor&option=203" rel="nofollow">thin film transistor;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=zinc tin oxide&option=203" rel="nofollow">zinc tin oxide;</a> </p> <div class="translation"> 机译：氧化铟锌;分子前体;photopterning;薄膜晶体管;氧化锌锌; 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</li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120106918545.html">无定形氧化物薄膜、使用所述无定形氧化物薄膜的薄膜晶体管及其制造方法</a> <b>[P]</b> . <span> 中国专利： CN102742015A </span> <span> . 2012-10-17</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/061201997457.html">一种铟镓锌氧化物半导体薄膜和铟镓锌氧化物TFT制备方法</a> <b>[P]</b> . <span> 中国专利： CN103779425B </span> <span> . 2016.04.06</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130411378855.html">PDMS - - METHODS OF MANUFACTURING ALUMINIUM-INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR USING PDMS PASSIVATINION LAYER AND ALUMINIUM-INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY THE METHODS</a> <b>[P]</b> . <span> 外国专利：  KR101630028B1 </span> <span> . 2016-06-13</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：PDMS--使用PDMS钝化层和铝铟锌氧化物半导体薄膜晶体管制造铝铟锌氧化物薄膜晶体管的方法 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130414170002.html">METHODS OF MANUFACTURING ALUMINIUM-INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR USING PDMS PASSIVATINION LAYER AND ALUMINIUM-INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY THE METHODS</a> <b>[P]</b> . <span> 外国专利：  KR20150103543A </span> <span> . 2015-09-11</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：利用该方法制造的PDMS钝化层和铝铟锌氧化物薄膜晶体管制造铝铟锌氧化物薄膜晶体管的方法 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130423071560.html">Method of fabricating an amorphous zinc-oxide based thin film transistor (TFT) including source/drain electrodes formed between two oxide semiconductor layers</a> <b>[P]</b> . <span> 外国专利：  US8058116B2 </span> <span> . 2011-11-15</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：制造包括形成在两个氧化物半导体层之间的源/漏电极的基于非晶氧化锌的薄膜晶体管（TFT）的方法 </span> </p> </li> </ul> </div> </div> </div> <div class="theme cardcommon" style="overflow: auto;display:none"> <h3 class="all_title" id="enpatent55">相关主题</h3> <ul id="subject"> </ul> </div> </div> </div> </div> <div class="right rightcon"> <div class="details_img cardcommon clearfix" style="margin-bottom: 10px;display:none;" > </div> </div> </div> <div id="thesis_get_original1" class="downloadBth" style="bottom: 19px;z-index: 999;" onclick="ywcd('0704022434221','4',7,2,1,'',this,24)" class="delivery" prompt="010401" title="通过人工服务将文献原文发送至邮箱" >获取原文</div> <div class="journalsub-pop-up" style="display: none"> <div class="journal-sub"> <h2>期刊订阅</h2> <img src="https://cdn.zhangqiaokeyan.com/img/loginclose.png" alt="关闭" 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