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Chiral zero energy modes in two-dimensional disordered Dirac semimetals

机译:二维无序狄拉克半型中的手性零能量模式

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摘要

The vacancy-induced chiral zero energy modes (CZEMs) of chiral-unitary-class (AIII) and chiral-symplectic-class (CII) two-dimensional (2D) disordered Dirac semimetals realized on a square bipartite lattice are investigated numerically by using the Kubo-Greenwood formula with the kernel polynomial method. The results show that, for both systems, the CZEMs exhibit the critical delocalization. The CZEM conductivity remains a robust constant (i.e., sigma(CZEM) approximate to 1.05e(2)/h), which is insensitive to the sample sizes, the vacancy concentrations, and the numbers of moments of Chebyshev polynomials, i.e., the dephasing strength. For both kinds of chiral systems, the CZEM conductivities are almost identical. However, they are not equal to that of graphene (i.e., 4e(2)/pi h), which belongs to the chiral orthogonal class (BDI) semimetal on a 2D hexagonal bipartite lattice. In addition, for the case that the vacancy concentrations are different in the two sublattices, the CZEM conductivity vanishes, and thus both systems exhibit localization at the Dirac point. Moreover, a band gap and a mobility gap open around zero energy. The widths of the energy gaps and mobility gaps are increasing with larger vacancy concentration difference. The width of the mobility gap is greater than that of the band gap, and a delta-function-like peak of density of states emerges at the Dirac point within the band gap, implying the existence of numerous localized states.
机译:的空缺引起的手性零种能量模式的手性统一级(AIII)和手性辛级(CII)的二维(2D)的(CZEMs)无序实现上的正方形二分格狄拉克半金属,通过使用数值研究久保格林伍德式与内核多项式方法。结果表明,这两个系统中,CZEMs表现出的临界离域。所述CZEM电导率保持健壮恒定(即,西格马(CZEM)近似于1.05E(2)/小时),这是不敏感的样本大小,空置浓度和切比雪夫多项式,即力矩的数字,移相力量。对于这两种手性系统中,CZEM电导率几乎是相同的。然而,它们不等于石墨烯(即,4E(2)/ PI h)时,其属于手性正交类(BDI)半金属上的二维六角点阵二部。此外,对于该空位浓度在这两个亚晶格不同的情况下,导电性CZEM消失,因此这两种系统在狄拉克点表现出定位。此外,带隙和流动性缺口打开各地的零能耗。能隙和移动间隙的宽度与较大的空位浓度的差异增加。的移动性间隙的宽度比的带隙大,并且Δ-功能状态密度的峰出现在带隙内的狄拉克点,这意味着大量的局域化能态的存在。

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  • 来源
    《Physical review, B》 |2018年第15期|共10页
  • 作者单位

    Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China;

    Shijiazhuang Univ Phys Dept Shijiazhuang 050035 Hebei Peoples R China;

    Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China;

    Shijiazhuang Univ Phys Dept Shijiazhuang 050035 Hebei Peoples R China;

    Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
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