Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor

摘要

Highlights ? This paper presents an integrated magnetic sensitive differential circuit, consisting of two heterojunction silicon magnetic sensitive transistors (HSMSTs) with opposite magnetic sensitive directions and two collector load resistors. ? The chips were designed and fabricated on the p-type ?100? double-side polished silicon wafer with high resistivity by micro electro-mechanical system (MEMS) technology and chemical vapor deposition (CVD) method. ? The magnetic sensitivity and temperature characteristics can be obviously improved by the usage of the integrated differential circuit based on HSMSTs. Abstract This paper presents an integrated magnetic-sensitive