Aluminium-doped n-type ZuS nanowires as high-performance UV and humidity sensorsNPeng JiangDSchool of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui 230009, P. R. China
Controlling the electrical transport properties of II-VI nanostructures is vital to their practical applications. Here, we report the synthesis of n-type ZnS nanowires (NWs) by using aluminium (Al) as a dopant via a simple thermal co-evaporation method. The conductivities of the ZnSiAl NWs were greatly enhanced upon Al doping and could be further tuned in a wide range of 3 orders of magnitude by adjusting the doping level. Field-effect transistors (FETs) fabricated from individual ZnS:Al NWs revealed an electron concentration up to 1.3 x 10~(18) cm~(-3) in the NWs. Significantly, the doped NWs showed great potential as visible-Wind UV sensors with an extremely high responsivity of 4.7 x 10~6. A W ', giving rise to a large gain-bandwidth (GB) of ~0.1 GHz. The high sensitivity of the ZnS:Al NWs to humidity was also investigated; the devices displayed a resistance variation of about 2 orders of magnitude in the relative humidity (RH) range of 50-90%. Our results demonstrate that the n-type ZnS:Al NWs have important applications in nanoelectronic and nano-optoelectronic devices.
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机译:控制II-VI纳米结构的电传输特性对其实际应用至关重要。在这里,我们通过简单的热共蒸发方法报告了以铝(Al)为掺杂剂合成n型ZnS纳米线(NWs)的方法。铝掺杂后,ZnSiAl NWs的电导率大大提高,可以通过调节掺杂水平在3个数量级的宽范围内进一步调节。由单个ZnS:Al NW制成的场效应晶体管(FET)在NW中显示出高达1.3 x 10〜(18)cm〜(-3)的电子浓度。值得注意的是,掺杂的NW作为可见风UV传感器具有巨大的潜力,具有4.7 x 10〜6的极高响应度。 W',导致〜0.1 GHz的大增益带宽(GB)。还研究了ZnS:Al NWs对湿度的高敏感性。这些器件在50-90%的相对湿度(RH)范围内显示出大约2个数量级的电阻变化。我们的结果表明,n型ZnS:Al NW在纳米电子和纳米光电器件中具有重要的应用。
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