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Mechanoluminescence properties of Mn2+-doped BaZnOS phosphor

机译:Mn2 +掺杂BaZnOS荧光粉的机械发光性质

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摘要

In this study, a novel Mn2+-doped wide band gap semiconductor, BaZnOS, demonstrates intense elastico-mechanoluminescence (EML) under pressure and friction, and the intensity of emission peaks is proportional to the applied compressive stress. Besides, orange-to-red EML emission peaks (586, 610 nm) were observed after application of different mechanical stimuli, which differs from the photoluminescence (PL) peak, which is fixed at 634 nm. The special phenomenon indicates that BaZnOS: Mn2+ could be employed as a stress sensor that not only records the stress magnitude and distribution, but also identifies the stress type. The novel variational EML property, originating from different mechanical stimuli, indicates a new view for exploiting PL and EML multicolor applications.
机译:在这项研究中,一种新型的Mn2 +掺杂的宽带隙半导体BaZnOS在压力和摩擦下表现出强烈的弹性机械发光(EML),并且发射峰的强度与施加的压应力成比例。此外,在施加不同的机械刺激后,观察到橙红色EML发射峰(586、610 nm),这不同于固定在634 nm的光致发光(PL)峰。这种特殊现象表明BaZnOS:Mn2 +可以用作应力传感器,不仅可以记录应力大小和分布,还可以识别应力类型。源于不同的机械刺激的新颖的变体EML特性为利用PL和EML多色应用程序提供了新的视角。

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