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Acceleration of groove formation in silicon using catalytic wire electrodes for development of a slicing technique

机译:利用催化线电极加速硅中沟槽的形成,以开发切片技术

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摘要

A novel electrochemical technique for silicon slicing in which anodic potential is applied to a platinum wire, keeping it in contact with silicon, is proposed. Since silicon was dissolved in a solution containing hydrogen fluoride at the site of contact with the platinum wire electrode, a groove was formed in the silicon. The grooving speed depended on the concentration of hydrogen fluoride and additives in the solution. A grooving speed of 0.85 mm/h was obtained at room temperature using an electrolyte composed of 30wt.% hydrofluoric acid, 1 mM iodine, and 0.03 vol.% glycerol. Iodine acted as a catalyst for the oxidaton of silicon, and glycerol prevented the filling of grooves with gases. Further increase in grooving speed to 1.0 mm/h was achieved by applying pulsed potentials oscillating between 1 and 2 V vs. Ag/AgCl in the same electrolyte.
机译:提出了一种新型的硅切片电化学技术,其中将阳极电势施加到铂丝上,使其与硅保持接触。由于硅在与铂丝电极接触的位置处溶解在包含氟化氢的溶液中,因此在硅中形成了沟槽。开槽速度取决于溶液中氟化氢和添加剂的浓度。使用由30wt。%的氢氟酸,1mM的碘和0.03vol。%的甘油组成的电解质,在室温下开槽速度为0.85mm / h。碘充当硅氧化的催化剂,甘油阻止气体填充沟槽。通过在同一电解液中施加相对于Ag / AgCl的1-2 V之间波动的脉冲电势,可将开槽速度进一步提高到1.0 mm / h。

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