Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon-Germanium-On-Insulator (SGOI) Metal-Oxide-Semiconductor Field-Effect Transistors with Localized Charges

摘要

An analytical threshold voltage model of short-channel strained-Si on silicon-germanium-oninsulator (SGOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) including the effect of localized charges near the drain end is presented. The present model is based on the twodimensional (2D) channel potential in the subthreshold regime of device operation which is obtained by solving the 2D Poisson's equation with suitable boundaries conditions. Hot-carrier-induced device degradation is investigated for various device dimensions and charge distributions. To validate the present threshold voltage model, theoretical results are compared with the simulation data obtained by using the commercial ATLAS~(TM) 2D device simulation software.