Characterization of hot wall grown N-9-anthracenylidene-l-anthramine films

摘要

The compound N-9-anthracenylidene-l-anthramine has been synthesized and films of thickness 1.1 μm were grown by Hot Wall setup on glass substrate kept at different temperatures in vacuum of 10~(-5) ton. The experimental conditions were optimized to obtain better crystallinity of the samples. Nuclear magnetic resonance (NMR) and infrared (IR) spectra of samples obtained from the films appear to be same as that of pure starting com-pound. Observations reveal that the current-voltage characteristics of the films show ohmic behaviour within the investigated field and temperature range and the conduction appears to take place by thermally activated hopping mechanism. The film deposited at higher substrate temperature shows comparatively more intense X-ray diffraction peaks suggesting a higher degree of crystallinity. Sharp cuboid crystallites as wide as 0.7 μm are obtained for films deposited at 340 K. The optical absorption studies indicate that the inter band transition energy of films prepared at different substrate temperatures has been found to lie in range 2.33 -2.41eV.