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Color-Tunable Highly Bright Photoluminescence of Cadmium-Free Cu-Doped Zn-ln-S Nanocrystals and Electroluminescence

机译:无镉掺杂铜的Zn-In-S纳米晶体的颜色可调高亮度发光和电致发光

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摘要

A series of Cu doped Zn-In-S quantum dots (Cu:Zn—In—S d-dots) were synthesized via a one-pot noninjection synthetic approach by heating up a mixture of corresponding metal acetate salts and sulfur powder together with dodecanethiol in oleylamine media. After overcoating the ZnS shell around the Cu:Zn—In—S d-dot cores directly in the crude reaction solution, the resulting Cu:Zn-In~S/ZnS d- dots show composition-tunable photoluminescence (PL) emission over the entire visible spectral window and extending to the near-infrared spectral window (from 450 to 810 nm), with the highest PL quantum yield (QY) up to 85%. Importantly, the initial high PL QY of the obtained Cu:Zn— In~S/ZnS d-dots in organic media can be preserved when transferred into aqueous media via Hgand exchange. Furthermore, electroluminescent devices with good performance (with a maximum luminance of 220 cd m~(-2), low turn-on voltages of 3-6 V) have been fabricated with the use of these Cd-free low toxicity yellow-emission Cu:Zn~In—S/ZnS d-dots as an active layer in these QD-based light-emitting diodes.
机译:通过一锅法非注射合成方法,通过加热相应的金属乙酸盐和硫粉以及十二烷硫醇的混合物,合成了一系列的铜掺杂的Zn-In-S量子点(Cu:Zn-In-S d-点)在油胺介质中。在粗反应溶液中直接在Cu:Zn-In-S d-dot核周围包覆ZnS壳后,所得的Cu:Zn-In-S / ZnS d-dot在整个反应过程中显示出组成可调的光致发光(PL)发射。整个可见光谱窗口并扩展到近红外光谱窗口(从450到810 nm),最高PL量子产率(QY)高达85%。重要的是,当通过Hgand交换转移到水介质中时,可以保留有机介质中获得的Cu:Zn- In〜S / ZnS d-dots的初始高PL QY。此外,使用这些不含镉的低毒性黄光发射铜,已经制造出具有良好性能的电致发光器件(最大亮度为220 cd m〜(-2),低开启电压为3-6 V)。 :Zn〜In-S / ZnS d点作为这些基于QD的发光二极管中的有源层。

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