High performance CMOS transistor

摘要

Mitsubishi Electric Corporation has succeeded in developing a 0.18V-operated CMOS (complementary mental-oxide semiconductor) transistor having gate length of 0.18m that features the world's top class current drive capacity and 12 pico seconds (when unloaded) delay time per gate stage, top of the industry. The new CMOS transistor has changed the direction of the flow of the current from the previous 110 axes type of silicone substrate crystal to 100 axes type by tilting by 45. This has increased charged particle speed of the p-channel transistor by about 7%. When drain current during power ON was compared with electric current of 1 nano A/?m during power OFF, it turned out to be 350 A/m with the previous 110 axes, but 400 A/m with the 100 axes type.