机译:Low coercive field of SrBi{sub}2Ta{sub}2O{sub}9 by La-substitution and vacancy introduction - control of ferroelectric properties through defect engineering
机译:Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using (Bi,La){sub}4Ti{{sub}3O{sub}12 and high capacitance buffer layers