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Journal of vacuum science and technology

SCIEICA

中文名称：真空科学与技术杂志》上

ISSN：2166-2746
出版周期：Bimonthly

发文量：0

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1.ZnO flexible high voltage thin film transistors for power management in wearable electronics

机译：氧化锌灵活高压薄膜晶体管在可穿戴电子产品电源管理
- 作者：Wen-Chiang Hong;Yonghui Zhang;Sze-Ying WangYuxuan LiNavila AlimXiaolong DuZengxia MeiYicheng Lu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第5期
2.Field-emission scanning probe lithography tool for 150mm wafer

机译：场发射扫描探针光刻工具150毫米晶圆
- 作者：Mathias Holz;Elshad Guliyev;Ahmad AhmadTzvetan IvanovAlexander ReumMartin HofmannClaudia LenkMarcus KaestnerChristoph ReuterSteve LenkIvo W. RangelowNikolay Nikolov
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
3.Highly parallel scanning tunneling microscope based hydrogen depassivation lithography

机译：高度并行扫描隧道显微镜基于氢脱钝光刻
- 作者：John N. Randall;James H. G. Owen;Joseph LakeRahul SainiEhud FuchsMohammad MahdaviS. O. Reza MoheimaniBenjamin Carrion Schaefer
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
4.Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography

机译：锋利的氮化镓纳米线作为场发射器积极为扫描探针悬臂光刻
- 作者：Claudia Lenk;Martin Hofmann;Tzvetan IvanovAhmad AhmadSteve LenkIvo W. RangelowAlexander ReumChristoph ReuterMathias HolzMahmoud BehzadiradAshwin K. RishinaramangalamDaniel FeezellTito Busani
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
5.Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode

机译：场致发射的试验研究ultrasharp硅,钻石,GaN和钨建议在靠近柜台电极
- 作者：Claudia Lenk;Steve Lenk;Mathias HolzElshad GuliyevMartin HofmannTzvetan IvanovIvo W. RangelowMahmoud BehzadiradAshwin K. RishinaramangalamDaniel FeezellTito Busani
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
6.Field emission from diamond nanotips for scanning probe lithography

机译：从钻石纳米尖端场发射扫描探针光刻
- 作者：Martin Hofmann;Claudia Lenk;Tzvetan IvanovIvo W. RangelowAlexander ReumAhmad AhmadMathias HolzEberhard Manske
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- scanning probe;
- AVS;
- swine erysipelasCMOS devicesfield emissionLithography;
7.Theoretical investigation of the enhancement factor for a single field emitter in close proximity to the counter electrode

机译：增强的理论研究因素一场发射器关闭靠近柜台电极
- 作者：Steve Lenk;Claudia Lenk;Ivo W. Rangelow
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
8.Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

机译：负的电子亲和能InGaN分析光电阴极的temperature-programed解吸方法
- 作者：Masahiro Kashima;Daiki Sato;Atsushi KoizumiTomohiro NishitaniYoshio HondaHiroshi AmanoHokuto IijimaTakashi Meguro
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
9.Preparation of Ga-terminated negative electron affinity-GaAs (100) surface by HCl-isopropanol treatment for nanoanalysis by scanning tunneling microscopy

机译：制备Ga-terminated -电子由HCl-isopropanol affinity-GaAs(100)表面治疗nanoanalysis扫描隧道显微镜
- 作者：Ryutaro Fukuzoe;Masayuki Hirao;Daichi YamanakaYouta IwabuchiHokuto IijimaTakashi Meguro
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
10.Electrospun charge transport structures for hybrid perovskite solar cells

机译：实际上电纺电荷传输为混合结构钙钛矿的太阳能电池
- 作者：John P. Murphy;Molly C. Brockway;Jessica M. AndrioloJack L. Skinner
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Carrier transport;
- AVS;
- ElectrospinningPhotoelectricitysolar cellsperovskite;
11.Moth-eye antireflection nanostructure on glass for CubeSats

机译：Moth-eye防反射在玻璃纳米结构
- 作者：Yaoze Liu;Mohammad Soltani;Ripon Kumar DeyBo CuiRegina LeeHugh Podmore
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
12.Visualization of organic/inorganic hybridization of UV-cured films with trimethylaluminum by scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

机译：可视化的有机/无机杂化与trimethylaluminum所用的电影扫描透射电子显微镜和能量色散x射线能谱法
- 作者：Masaru Nakagawa;Takuya Uehara;Yuki OzakiTakahiro NakamuraShunya Ito
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
13.Fabrication and replication of re-entrant structures by nanoimprint lithography methods

机译：制造和复制的凹角结构由nanoimprint光刻的方法
- 作者：Nikolaos Kehagias;Achille Francone;Markus GuttmannFrank WinklerAriadna FernándezClivia M. Sotomayor Torres
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
14.Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists

机译：Phenol-functionalized聚合控制添加剂的负面基调环氧交联分子抵抗
- 作者：Hannah Narcross;Brandon L. Sharp;Peter J. LudoviceLaren M. TolbertClifford L. Henderson
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Resists;
- Phenols;
- Cross-linkedResolving powerEpoxy CompoundsAdditivesPolymerization;
15.Influence of tetramethylammonium hydroxide on niobium nitride thin films

机译：tetramethylammonium氢氧根的影响氮化铌薄膜
- 作者：Emily Toomey;Marco Colangelo;Navid AbedzadehKarl K. Berggren
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
16.In situ femtosecond pulse laser ablation for large volume 3D analysis in scanning electron microscope systems

机译：为大型原位飞秒脉冲激光烧蚀卷3 d分析扫描电子显微镜系统
- 作者：Steven Jeffrey Randolph;Jorge Filevich;Aurelien BotmanRenae GannonChad RueMarcus Straw
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
17.Designing an anisotropic noise filter for measuring critical dimension and line edge roughness from scanning electron microscope images

机译：设计一个各向异性噪声过滤测量临界尺寸和线边从扫描电子显微镜粗糙度图片
- 作者：Hyesung Ji;Soo-Young Lee
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
18.On the trends and application of pattern density dependent isofocal dose of positive resists for 100 keV electron beam lithography

机译：密度的趋势和应用模式依赖isofocal积极抵制100 keV电子束光刻技术
- 作者：Gerald G. Lopez;Glen de Villafranca;Mohsen AzadiMeredith G. MetzlerKevin ListerMichael LabellaChad EichfeldNikola BelicUlrich Hofmann
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
19.Stochastic simulation of pattern formation in electron beam lithography

机译：随机模拟的模式形成电子束光刻技术
- 作者：Masaaki Yasuda;Masanori Koyama;Masamitsu ShiraiHiroaki KawataYoshihiko Hirai
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
20.Effects of lithographic parameters in massively parallel electron-beam systems

机译：光刻参数极大的影响平行的电子束系统
- 作者：Soomin Moon;Soo-Young Lee;Jin ChoiSeom-Beom KimChan-Uk Jeon
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- gastrointestinal clip;
- Throughput;
- Parallel LinesAVSelectron beamLithographybeam system;
21.Statistical comparison of field height correction by Z-stage movement versus height-correction hardware in a modern electron-beam lithography tool

机译：统计比较的领域高度修正由Z-stage运动和高度改正硬件在现代电子束光刻技术工具
- 作者：Michael P. Young
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Electron beam lithography;
- Four Corners;
- LithographyComputer hardwarealtitude correction;
22.Fabrication of astronomical x-ray reflection gratings using thermally activated selective topography equilibration

机译：制造的天文x射线反射光栅使用热激活选择性地形平衡
- 作者：Jake A. McCoy;Randall L. McEntaffer;Chad M. Eichfeld
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Resists;
- Taste;
- AVSX-ray reflectionfabricationPolymethyl Methacrylateheat treatment;
23.Variations of the field of view depending on the Si deflector shape in a microcolumn

机译：根据变化的字段视图如果在微柱凝集偏转器的形状
- 作者：Hyung Woo Kim;Young Bok Lee;Dae-Wook KimSeungjoon AhnTae Sik OhHo Seob KimYoung Chul Kim
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
24.Investigating the interplay of lateral and height dimensions influencing neuronal processes on nanogrooves

机译：调查横向和高度的相互作用影响神经过程维度
- 作者：Alex J. Bastiaens;Sijia Xie;Regina Luttge
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- dimensions;
- redundant constraint;
- SubstratesNeuronal Outgrowthresist patternLateralCrestridges;
25.Progress in metal organic cluster EUV photoresists

机译：金属有机集群EUV光阻的进展
- 作者：Kazunori Sakai;Hong Xu;Vasiliki KosmaEmmanuel P. GiannelisChristopher K. Ober
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Newton meter;
- Extreme ultraviolet lithography;
- AVSPhotoresistsPhotonlight exposure;
26.Unbiased roughness measurements: Subtracting out SEM effects, part 2

机译：公正的粗糙度测量:减去SEM效果,第2部分
- 作者：Gian F. Lorusso;Vito Rutigliani;Frieda Van RoeyChris A. Mack
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
27.Optimized structure of standard sample with programed defects for pattern inspection using electron beams

机译：优化结构的标准样品程序缺陷模式检查使用电子束
- 作者：Susumu Iida;Takayuki Uchiyama
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Structural optimization;
- electron beam;
- Defect detectionSTANDARD SAMPLEstacked structure;
28.Improving the resolution and throughput of achromatic Talbot lithography

机译：提高分辨率和吞吐量消色差塔尔博特光刻
- 作者：Dimitrios Kazazis;Li-Ting Tseng;Yasin Ekinci
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
29.Atomic force microscope integrated with a scanning electron microscope for correlative nanofabrication and microscopy

机译：原子力显微镜与扫描集成电子显微镜的相关奈米制造和显微镜
- 作者：Ivo W. Rangelow;Marcus Kaestner;Tzvetan IvanovAhmad AhmadSteve LenkClaudia LenkElshad GuliyevAlexander ReumMartin HofmannChristoph ReuterMathias Holz
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Atomic Force Microscopy;
- atomic forces;
- Scanning Electron MicroscopeNanofabricationIntegrate;
30.Review Article: Review of electrohydrodynamical ion sources and their applications to focused ion beam technology

机译：评论文章:electrohydrodynamical复审离子聚焦离子来源和他们的应用程序梁技术
- 作者：Jacques Gierak;Paul Mazarov;Lars BruchhausRalf JedeLothar Bischoff
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
31.Structural characterization of tantalum nitride films as wet etch stop layer in advanced multiwork function metal gate MOSFETs

机译：氮化钽的结构性特征电影作为湿蚀刻停止层发达multiwork功能金属栅场效应管
- 作者：Petra Mennell;Hamed Parvaneh;Zeynel BayindirDong Hun KangFrieder BaumannAnita MadanAbner BelloAshawaraya ShaliniMark Klare
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
32.Reactivity studies and structural properties of Al on compound semiconductor surfaces

机译：反应性研究和结构的性质在化合物半导体表面
- 作者：Wendy L. Sarney;Stefan P. Svensson;Kaushini S. WickramasingheJoseph YuanJavad Shabani
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
33.Tutorial on interpreting x-ray photoelectron spectroscopy survey spectra: Questions and answers on spectra from the atomic layer deposition of Al_2O_3 on silicon

机译：教程解释x射线光电子光谱测量光谱:问题和答案在原子层的光谱沉积Al_2O_3的硅
- 作者：Dhruv Shah;Dhananjay I. Patel;Tuhin RoychowdhuryG. Bruce RaynerNoel OTooleDonald R. BaerMatthew R. Linford
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
34.Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

机译：交互的氢和二氧化铪在原子层淀积二氧化硅技术
- 作者：Vladimir Kolkovsky;Sebastian Scholz;Valery KolkovskyJan-Uwe SchmidtRene Heller
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Hydrogen;
- atomic layer deposition;
- AVSHafnia;
35.Effect of magnetic field directionality on discharging characteristics of Hall effect thruster with azimuthal diversion rail

机译：磁场方向的影响霍尔效应的放电特征推进器与方位转移轨道
- 作者：Yongjie Ding;Hongbo Su;Lei WangHong LiLiqiu WeiBoyang JiaHezhi SunPeng LiDaren Yu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
36.Effects of annular-cylindrical combined channel Hall thruster length on the discharge characteristics

机译：annular-cylindrical结合通道的影响霍尔推力器放电长度特征
- 作者：Yongjie Ding;Hongbo Su;Boyang JiaHong LiLiqiu WeiPeng LiHezhi SunDaren Yu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- power deposition;
- exterior walls;
- discharge characteristicHall thrustersMAGNETIC GRADIENT;
37.Silver-doped tin oxide for electrical property enhancement in p-type channel thin film transistor

机译：Silver-doped二氧化锡的电性质增强在p型通道薄膜晶体管
- 作者：An Hoang-Thuy Nguyen;Manh-Cuong Nguyen;Hyungmin JiJonggyu CheonKyoungmun YuJinhyun KimSangwoo KimSeongyong ChoRino ChoiHoai Phuong PhamQuang Trung Tran
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
38.Single electron transistors with e-beam evaporation of SiO_2 tunnel barriers

机译：与电子束单电子晶体管蒸发SiO_2隧道壁垒
- 作者：Matthew J. Filmer;Gregory L. Snider;Alexei O. Orlov
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
39.Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach

机译：导电纤维密度的分析电阻随机存取记忆:一个3 d动能蒙特卡罗方法
- 作者：Samuel Aldana;Pedro García-Fernández;Rocío Romero-ZalizFrancisco Jiménez-MolinosFrancisco Gómez-CamposJuan Bautista Roldán
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Filaments;
- LOW RESISTANCE;
- AVSHypodermaconductivityThree Dimensions;
40.Magnetic nanotubes obtained from atomic layer deposition coated electrospun nanofibers

机译：从原子层获得的磁纳米管静电纺丝沉积涂层
- 作者：Alejandro Pereira;Juan Escrig;Juan Luis PalmaCarol López de DicastilloCristian Pati?oMaría José Galotto
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
41.Prediction of surface topography due to finite pixel spacing in focused ion beam milling of circular holes and trenches

机译：由于有限的预测的表面形貌像素间距的聚焦离子束铣圆孔和战壕
- 作者：Alexander V. Rumyantsev;Nikolay I. Borgardt
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
42.Development of ultralight nanocellulose magnets using ultrasonic agitation

机译：超轻型nanocellulose磁铁的发展使用超声波搅拌
- 作者：Derek T. Bradley;Eric Clausen;Paul M. ShandMatthew FlemingTimothy E. Kidd
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- PARTICLE DISTRIBUTION;
- AVS;
- Compositesmass-ratioultrasonic agitation;
43.Nanostructures prepared by vacuum-line deposition of organosilanes through a colloidal mask

机译：纳米结构由真空管路沉积通过胶体有机硅烷的面具
- 作者：Susan D. Verberne-Sutton;Zorabel M. LeJeune;Sean HillJason P. LeJeuneJayne C. Garno
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- ORGANOSILOXANE;
- Colloidal lithography;
- jigs(templates)AVSarea samplingSolventsNanostructureFilms;
44.Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon

机译：oxygen-inserted层和氧化的影响覆盖层的掺杂剂激活形成ultrashallow pn结硅
- 作者：Xi Zhang;Daniel Connelly;Hideki TakeuchiMarek HythaRobert J. MearsLeonard M. RubinTsu-Jae King Liu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
45.Enhancing the focused ion beam etch rate of Ag films by Joule heating

机译：提高聚焦离子束刻蚀Ag)电影通过电阻加热
- 作者：Takahiro Sasaki;Hironori Tohmyoh
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Resistance heating;
- Silver;
- Ion beamssurface properties(materials)Films;
46.Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

机译：高斯分布在current-conduction机制(Ni / Pt)肖特基接触的宽隙AlInGaN四元合金
- 作者：Engin Arslan;?emsettin Alt?ndal;Serta? Ural?mer Ahmet KayalMustafa ?ztürkEkmel ?zbay
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
47.Effects of Ar~+ etching of Cu_2ZnSnSe_4 thin films: An x-ray photoelectron spectroscopy and photoluminescence study

机译：基于“增大化现实”技术的影响~ +蚀刻Cu_2ZnSnSe_4瘦电影:一个x射线光电子能谱和光致发光研究
- 作者：Michael V. Yakushev;Mikhail A. Sulimov;Ekaterina SkidchenkoJose Márquez- PrietoIan ForbesPaul R. EdwardsMikhail V. KuznetsovVadim D. ZhivulkoOlga M. BorodavchenkoAlexander V. MudryiJuri KrustokRobert W. Martin
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
48.Band alignment of atomic layer deposited SiO_2 on (010) (Al_(0.14)Ga_(0.86))_2O_3

机译：乐队原子层沉积SiO_2的对齐(010) (Al_(0。14 Ga_ (0.86) _2O_3
- 作者：Chaker Fares;F. Ren;Eric LambersDavid C. HaysB. P. GilaS. J. Pearton
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
49.Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors

机译：碳掺杂对阈值电压的影响流动的In-Si-O薄膜晶体管
- 作者：Kazunori Kurishima;Toshihide Nabatame;Nobuhiko MitomaTakio KizuShinya AikawaKazuhito TsukagoshiAkihiko OhiToyohiro ChikyowAtsushi Ogura
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
50.Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO_2 barrier

机译：通过使用磷硅酸盐玻璃固体源兴奋剂为p型散装Si(100)衬底:角色的限制SiO_2的障碍
- 作者：Yoshiaki Kikuchi;Antony Peter;Bartlomiej Jan PawlakAn De KeersgieterPierre EybenNaoto HoriguchiAnda Mocuta
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- phosphosilicate glasses;
- Surface resistance;
51.TEOS layers for low temperature processing of group IV optoelectronic devices

机译：张志贤层低温处理第四组光电设备
- 作者：Simone Assali;Anis Attiaoui;Samik MukherjeeJér?me NicolasOussama Moutanabbir
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
52.Dual-band ultraviolet photodetectors comprising nanostructured MgZnO on ZnO films

机译：双频紫外线光电探测器组成对氧化锌纳米MgZnO电影
- 作者：Ching-Ting Lee;Tzu-Shun Lin;Hsin-Ying LeeDay-Shan Liu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
53.Enhanced cracking in Si/B-doped Si_(0.70)Ge_(0.30)/Si heterostructures via hydrogen trapping effect

机译：增强在Si / B-doped开裂Si_ Ge_(0.70)(0.30) /硅异质结构通过氢陷阱效应
- 作者：Xing Wei;Zhongying Xue;Yongwei ChangJiurong LiGang WangDa ChenQinglei Guo
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- Newton meter;
- Heterostructures;
- CappingAVStrappingtrap effectshydrogen trap;
54.Effect of surface treatments on electrical properties of β-Ga_2O_3

机译：表面处理对电器的影响属性的β-Ga_2O_3
- 作者：Jiancheng Yang;Zachary Sparks;Fan RenStephen J. PeartonMarko Tadjer
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
- reversing current;
- oxide etch;
- AVSRectifiersdiode rectifierannealing;
55.Future prospects of fluoride based upconversion nanoparticles for emerging applications in biomedical and energy harvesting

机译：基于上转换氟化物的未来前景纳米粒子对新兴应用程序生物医学和能源获取
- 作者：Surya P. Tiwari;Sachin K. Maurya;Ram S. YadavAbhishek KumarVinod KumarMarie-France JoubertHendrik C. Swart
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
56.Broadband UV-assisted thermal annealing of low-k silicon carbonitride films using a C-rich silazane precursor

机译：宽带UV-assisted热退火的性能使用一个c的硅碳氮化物的电影硅氮烷前驱
- 作者：Wei-Yuan Chang;Hau-Ting Chung;Yi-Chang ChenJihperng Leu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2018年第6期
57.Effects of annealing on top-gated MoS_2 transistors with HfO_2 dielectric

机译：退火对top-gated MoS_2晶体管与HfO_2介质
- 作者：Peng Zhao;Angelica Azcatl;Pavel BolshakovJiyoung MoonChristopher L. HinklePaul K. HurleyRobert M. WallaceChadwin D. Young
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
58.Barrier tuning of atomic layer deposited Ta_2O_5 and Al_2O_3 in double dielectric diodes

机译：原子层沉积Ta_2O_5屏障的调整和Al_2O_3双重介质二极管
- 作者：Ibrahim Nemr Noureddine;Naser Sedghi;Ivona Z. MitrovicSteve Hall
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
59.Optimization of UV-assisted wet oxidation of GaAs

机译：优化UV-assisted湿法氧化砷化镓
- 作者：Filip Gucmann;Róbert Kúdela;Alica RosováEdmund Dobro?kaMatej Mi?u?íkDagmar Gregu?ová
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
60.Effect of oxide traps on channel transport characteristics in graphene field effect transistors

机译：氧化物陷阱对信道传输的影响石墨烯场效应的特征晶体管
- 作者：Marlene Bonmann;Andrei Vorobiev;Jan StakeOlof Engstr?m
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
61.Impact of low thermal processes on reliability of high-k/metal gate stacks

机译：低的热过程对可靠性的影响high-k /金属门栈
- 作者：Artemisia Tsiara;Xavier Garros;Cao-Minh Vincent LuClaire Fenouillet-BérangerGerard Ghibaudo
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Budgets;
- traps;
- interface layergateschimneysincreased densityheat treatment;
62.Transmission microwave spectroscopy for local characterization of dielectric materials

机译：传输微波光谱为当地电介质材料的表征
- 作者：Andrea Lucibello;Christopher Hardly Joseph;Emanuela ProiettiGiovanni Maria SardiGiovanni CapocciaRomolo Marcelli
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
63.Applications of clustering model to bimodal distributions for dielectric breakdown

机译：应用程序集群模型的双峰分布的介质击穿
- 作者：Ernest Y. Wu;Ronald Bolam;Ronald FilippiJames H. StathisBaozhen LiAndrew Kim
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
64.Reliability improvements of TiN/Al_2O_3/TiN for linear high voltage metal-insulator-metal capacitors using an optimized thermal treatment

机译：锡/ Al_2O_3 /锡的可靠性改进线性高压metal-insulator-metal电容器使用一个优化的热处理
- 作者：Aude Lefevre;Delphine Ferreira;Marc VeillerotJean-Paul BarnesGuy ParatMalte CzernohorskyFlorent Lallemand
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- DEPOSITION (PROCESS);
- Uniformity;
- High VoltageMIM capacitorsheat treatment;
65.In-depth study of the physics behind resistive switching in TiN/Ti/HfO_2/W structures

机译：深入研究电阻的物理现象开关在锡/ Ti / HfO_2 / W结构
- 作者：Gerardo González-Cordero;Francisco Jiménez-Molinos;Juan Bautista RoldánMireia Bargallo GonzálezFrancesca Campabadal
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Filaments;
- Physics;
- creationswitchingmetal electrodephysical simulationelectron transfer;
66.Mapping of CMOS FET degradation in bias space-Application to dram peripheral devices

机译：映射互补金属氧化物半导体场效应晶体管退化的偏见空间应用dram外围设备
- 作者：B. Kaczer;J. Franco;S. TyaginovM. JechG. RzepaT. GrasserB. J. OSullivanR. RitzenhalerT. SchramA. SpessotD. LintenN. Horiguchi
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Computer equipment;
- Dynamic random access storage;
- Field effect transistors;
67.Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks

机译：Function-fit模型进行的速率常数voltage-stressed灯丝的一代多层氧化物栈
- 作者：A. Rodriguez-Fernandez;J. Su?é;E. MirandaM. B. GonzálezF. Campabadal
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
68.Low-temperature atomic layer deposition-grown Al_2O_3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs:Impact of deposition conditions on interface state density

机译：低温原子层deposition-grownAl_2O_3 GaN /沃甘/氮化镓MOS栅极绝缘层HEMTs:沉积环境的影响界面态密度
- 作者：Milan Tapajna;Luká? Válik;Filip GucmannDagmar Gregu?ováKarol Fr?hlich?tefan Ha??íkEdmund Dobro?kaLajos TóthBéla PéczJán Kuzmík
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
69.Effect of illumination and electric field intensity on the efficiency improvement of amorphous silicon tandem solar cells

机译：照明和电场的影响强度的效率改进非晶硅太阳能电池串联
- 作者：Andrea Scuto;Cosimo Gerardi;Anna BattagliaSalvatore Lombardo
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
70.Effects of the extension of conductive filaments, a simulation approach

机译：扩展的影响导电纤维,仿真的方法
- 作者：Marco A. Villena;Juan B. Roldán;Pedro García-FernándezFrancisco Jiménez-Molinos
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
71.Analysis and in situ observation of humidity dependent atomic layer deposited-Al_2O_3 degradation

机译：分析和原位观察湿度依赖于原子层deposited-Al_2O_3退化
- 作者：Andreas Rückerl;Sophia Huppmann;Martin MandlSimeon KatzRoland Zeisel
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Atomicity;
- water seepage;
- Capacitance measurementhigh humiditymoistening;
72.Impact of temperature on conduction mechanisms and switching parameters in HfO_2-based 1T-1R resistive random access memories devices

机译：温度对传导机制的影响在HfO_2-based 1 t-1r切换参数电阻随机存取记忆装置
- 作者：Eduardo Pérez;Christian Wenger;Alessandro GrossiCristian ZambelliPiero OlivoRobin Roelofs
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- resistive state;
- TEMPERATURE RANGE;
- switchingTemperatureVital Signs;
73.High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved V_(th) stability

机译：High-k工程向沃甘/氮化镓/氮化镓界面MIS-HEMT改善V_ (th)稳定
- 作者：Nadine Szabó;Andre Wachowiak;Annett WinzerJohannes OckerJan G?rtnerRico HentschelAlexander SchmidThomas Mikolajick
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
74.Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO_2 as gate dielectric

机译：界面附近的州和界面的影响在氮化镓的阈值电压稳定陷阱和SiC晶体管采用SiO_2门介质
- 作者：Patrick Fiorenza;Giuseppe Greco;Filippo GiannazzoFerdinando IucolanoFabrizio Roccaforte
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
75.Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO_2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

机译：氧等离子体渗氮和退火的影响原子层沉积SiO_2 / high-k /金属门对高压输入和输出位于鳍形场效应晶体管的设备
- 作者：Shahab Siddiqui;Min Dai;Rainer LoesingErdem KaltaliogluRajan PandeyRajesh SathiyanarayananSandip DeSrini RaghavanHarold Parks
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
76.Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior

机译：调查的长期性能封闭的p型硅尖阵列可再生的和稳定的场致发射行为
- 作者：Christian Prommesberger;Christoph Langer;Robert ?awrowskiRupert Schreiner
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
77.Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

机译：Lithography-free定位砷化镓纳米线的生长聚焦离子束注入Ga
- 作者：Hermann Detz;Martin Kriz;Suzanne LancasterDonald MacFarlandMarkus SchinnerlTobias ZederbauerAaron Maxwell AndrewsWerner SchrenkGottfried Strasser
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Focused ion beams;
- acceleration voltage;
- Nanowiregallium arsenidesIon bombardmentGallium;
78.Enhanced field emission properties from carbon nanotube emitters on the nanopatterned substrate

机译：从碳增强的场致发射特性纳米管排放nanopatterned衬底
- 作者：Se Jung Kim;Seol Ah Park;Young-Cho KimByeong-Kwon Ju
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- LINE PATTERN;
- emission level;
- emissionCarbon NanotubesSubstratesfield emissionemitters;
79.Volume-expansion polymerization for UV-curable nanoimprinting

机译：体积膨胀聚合对紫外光固化
- 作者：Bingqing Luo;Zengju Fan;Ziping LiYulong ChenYanqing TianXing Cheng
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Resists;
- UV CURABLE;
- volume expansionVolume changesmonomersVOLUME CONTRACTIONPolymerization;
80.Subdiffraction plasmonic lens lithography prototype in stepper mode

机译：镜头Subdiffraction电浆蚀刻原型在步进模式
- 作者：Minggang Liu;Chengwei Zhao;Yunfei LuoZeyu ZhaoYanqin WangPing GaoChangtao WangXiangang Luo
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Newton meter;
- PROTOTYPE;
- steppersurface plasmonsstep sizeLithographyoperating distanceplasmonics;
81.Effect of droplet size, droplet placement, and gas dissolution on throughput and defect rate in UV nanoimprint lithography

机译：液滴大小的影响、滴放置和天然气溶解在紫外线吞吐量和缺陷率nanoimprint光刻
- 作者：Akhilesh Jain;Andrew Spann;Roger T. Bonnecaze
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
82.Transparent and visible light-insensitive acrylic photoresist for negative tone optical lithography

机译：透明,可见light-insensitive丙烯酸光刻胶的负面基调光学光刻技术
- 作者：Daniel J. Carbaugh;Savas Kaya;Faiz Rahman
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
83.Effects of postdeposition annealing on TiO_2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

机译：postdeposition退火的影响钛/氮化镓/沃甘/氮化镓/ Si金属氧化物半导体高电子迁移率晶体管
- 作者：Yu-Shyan Lin;Chi-Che Lu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- High electron mobility transistors;
- power performance;
- high power devicesannealing;
84.Synthesis and characterization of Ga_2O_3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition

机译：Ga_2O_3的合成和表征3日nanosheets c-sic-on-si低压化学汽相淀积
- 作者：Subrina Rafique;Lu Han;Jaesung LeeXu-Qian ZhengChristian A. ZormanPhilip X.-L. FengHongping Zhao
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
85.Current relaxation analysis in AlGaN/GaN high electron mobility transistors

机译：当前弛豫分析沃甘/氮化镓高电子迁移率晶体管
- 作者：Alexander Y. Polyakov;N. B. Smirnov;Ivan V. ShchemerovIn-Hwan LeeTaehoon JangAlexey A. DorofeevNadezhda B. GladyshevaEugene S. KondratyevYulia A. TurusovaRoman A. ZinovyevA. V. TurutinFan RenS. J. Pearton
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- First Derivative;
- TRANSIENT CURRENT;
- Relaxation timepeaks;
86.Effect of deposition conditions and composition on band offsets in atomic layer deposited Hf_xSi_(12x)O_y on InGaZnO_4

机译：沉积条件和成分的影响原子层沉积带偏移量
- 作者：David C. Hays;Brent P. Gila;Stephen J. PeartonAndres TruccoRyan ThorpeFan Ren
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
87.Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

机译：薄AlN InGaAs接口的钝化状态接口层金属绝缘体半导体应用程序
- 作者：Igor Krylov;Boaz Pokroy;Dan RitterMoshe Eizenberg
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
88.Influence of SiH_4 and pressure on PECVD preparation of silicon films with subwavelength structures

机译：SiH_4和压力对PECVD。制备硅薄膜与亚波长结构
- 作者：William W. Hernández-Montero;Carlos Zú?iga-Islas;Adrián Itzmoyotl-ToxquiJoel Molina-ReyesLaura E. Serrano-De la Rosa
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- silicon films;
- silanes;
- PHOTOSENSITIVITYplasma depositionFilmsFlow rates;
89.Electrical properties related to growth defects in metamorphic GaSb films on Si

机译：电气性能与生长缺陷有关如果变质GaSb电影
- 作者：Shun Sasaki;Katie Dropiewski;Shailesh MadisettiVadim TokranovMichael YakimovSerge OktyabrskySteven BentleyRohit GalatageAjey P. Jacob
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
90.Comparison of scanning laser annealing and microwave annealing for As1 implanted Si

机译：扫描激光退火和比较微波退火As1植入硅
- 作者：Zhao Zhao;Joe Hilman;Manny OropezaQiong NianTerry L. Alford
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Laser;
- laser annealing;
- DEEP WELLmicrowave annealingannealingImplants and Prosthesesscanning;
91.Fabrication and optical behavior of graded-index, moth-eye antireflective structures in CdTe

机译：制造和光学渐变型的行为,在CdTe moth-eye抗反射结构
- 作者：Lesley Chan;Amitabh Ghoshal;Eric A. DeCuir Jr.Yuan Ping ChenDaniel E. MorseMichael J. Gordon
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- GRADIENT INDEX;
- Infrared transmission;
- fabrication;
92.Review Article:Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

机译：评论文章:分子束外延的模拟结果InAlAs InP InGaAs层(111) A, B (111), (110)
- 作者：Christopher D. Yerino;Baolai Liang;Diana L. HuffakerPaul J. SimmondsMinjoo Larry Lee
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
93.Influence of copper nanowires grown in a dielectric layer on the performance of dielectric barrier discharge

机译：铜纳米线生长的影响介电层介质的性能障碍放电
- 作者：Zhao He;Zhihu Liang;Xiaoning ZhangChunliang Liu
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
94.Soft nanoimprint mold with rigid relief features for improved pattern transfer

机译：软nanoimprint模具与严格的救济功能为改善模式传输
- 作者：Liran Menahem;Mark Schvartzman
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
- Landforms (relief features);
- Surface contamination;
- Rigidglass materialsWritersNANOIMPRINTING;
95.Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors

机译：各种偏差和温度应力的影响在非晶态的低频噪声特性InGaZnO薄膜晶体管
- 作者：Hee-Joong Kim;Chan-Yong Jeong;Sang-Dae BaeHyuck-In Kwon
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第1期
96.Multiphoton photoemission of gold nanopillars fabricated by carbon nanotube templates

机译：nanopillars多光子光电发射的黄金通过碳纳米管模板制作的
- 作者：Mahta Monshipouri;Yaser Abdi;Sara DarbariSoichiro Tsujino
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第2期
97.Electron extraction electrode for a high-performance electron beam from carbon nanotube cold cathodes

机译：电子提取电极高性能碳的电子束纳米管冷阴极
- 作者：Jung Su Kang;Kyu Chang Park
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第2期
98.Electrical properties of Cs_3Sb photocathode emitters in panel device applications

机译：Cs_3Sb光电阴极的电特性发射器在面板设备应用程序
- 作者：Hyo-Soo Jeong;Kris Keller;Brad Culkin
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第2期
99.In situ study of graphene crystallinity effect on field electron emission characteristics

机译：原位研究石墨烯结晶度的影响场电子发射特性
- 作者：Shuai Tang;Yu Zhang;Ningsheng XuRunze ZhanLi GongPeng ZhaoJian ChenChaolun LiangJun ChenJuncong SheShaozhi Deng
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第2期
- electron field emission;
- graphene;
- Crystallinity;
100.Bright and durable field-emission source derived from frozen refractory-metal Taylor cones

机译：明亮的和持久的场发射源从冷冻难熔金属泰勒锥
- 作者：Gregory Hirsch
- 期刊名称：《Journal of vacuum science and technology, B. Nanotechnology & microelectronics: materials, processing, measurement, & phenomena: =JVST B》 | 2017年第2期

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