摘要:For nearly a century,semiconductor has kept playing an extremely important role in promoting the advancement of modern science,technology and society,owing to its performance advantages and industry-driven feature.Surprisingly,when the time comes to this day and age,the semiconductor area,which is entering into its 3rd generation era,even develops much rapidly than ever before.Overall,the semiconductor industry is mainly driven by three generations of materials.The first generation,represented by silicon(Si)and germanium(Ge),began from the 1950s.The second generation,represented by gallium arsenide(GaAs)and indium phosphide(InP),emerged from the 1980s.The third generation,focusing on those of gallium nitride(GaN)and silicon carbide(SiC),dated back to the late 20th century.The semiconductor industry,as the most capital,human and technology-intensive manufacturing area,is often faced with such a tough challenge:before the production begins,water and electricity have to be in place.Up to the present,nearly all the classical semiconductor growth technologies such as molecular beam epitaxy(MBE),pulsed laser deposition(PLD),metal-organic chemical vapor deposition(MOCVD),and atomic layer deposition(ALD)etc.have been relying heavily on high temperature processing and perfect vacuum conditions(Figs.1(a)and 1(b)),which were basically subjected to large power stability.