首页>外文会议>一般工业技术>Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France

Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France

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1.The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals

机译：碳，氢和氮对四英寸硅晶体浮区生长的影响
- 作者：E.Wolf;W.Schroeder;H.Riemann;B.Lux
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- carbon;
- hydrogen;
- nitrogen;
2.Transformation toughening in NiAl observed via Monte-Carlo simulations

机译：通过蒙特卡洛模拟观察到的NiAl中的相变增韧
- 作者：R.Guenin;P.C.Clapp;Y.Zhao;J.A.Rifkin
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- transformation toughening;
- NiAl;
- stress-induced martensite;
- monte-carlo simulation;
3.Tight-binding and local density approximation studies of semiconductor surfaces and small organic adsorbates

机译：半导体表面和小的有机吸附物的紧密结合和局部密度近似研究
- 作者：C.M.Goringe;A.P.Sutton
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- hydrocarbons;
- surface structures;
- semiconductors;
- organometallic vapour deposition;
4.Theoretical reflectance anisotropy spectroscopy and scanning tunnelling microscopy study of the GaAs(001) (2x4) surface

机译：GaAs（001）（2x4）表面的理论反射率各向异性光谱和扫描隧道显微镜研究
- 作者：J.M.Bass;S.J.Morris;C.C.Matthai
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
5.Thermal donor formation in aluminum doped silicon

机译：铝掺杂硅中的热施主形成
- 作者：J.L.Lindstroem;T.Hallberg
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- oxygen;
- thermal donors;
- aluminum;
6.Theory of enhanced diffusion in predoped and implanted silicon

机译：预掺杂和注入硅中增强扩散的理论
- 作者：E.Antoncik
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- dopant diffusion profiles;
- theory of diffusion;
- ion implantion;
7.Study of misfit-dislocation formation in strained-layer heteroepitaxy using ultrahigh vacuum scanning tunneling microscopy

机译：超高真空扫描隧道显微镜研究应变层异质性失配位错形成
- 作者：G.Springholz;G.Bauer
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- heteroepitaxy;
- defect formation;
- surfacem orphology;
- surface roughness;
- molecular beam epitaxy;
8.Uniaxial stress studies on the dominant nitrogen defect in silicon and germanium

机译：硅和锗中主要氮缺陷的单轴应力研究
- 作者：F.Berg Rasmussen;B.Bech Nielsen
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- germanium;
- nitrogen;
- uniaxial stress;
9.Stoichiometric disturbances in multi-atomic multilayered structures due to ion implantation through mask openings

机译：由于通过掩模开口进行离子注入而导致的多原子多层结构中的化学计量扰动
- 作者：M.M.Faye;A.Altibelli;C.Bonafos;A.Claverie
- 会议名称：《》 | 1995年
- monte carlo technique;
- multilayered structures;
- ion implantation;
10.The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon

机译：氧与硅中II类杂质Be，Cd和Zn的络合
- 作者：S.E.Daly;E.McGlynn;M.O.Henry;J.D.Campion;K.G.McGuigan;M.C. do Carmo;M.H.Nazare
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- oxygen;
- photoluminescence;
- group II elements;
11.Diffusion constant of Ga, In and As adatoms on GaAs (001) surface: molecular dynamics calculations

机译：Ga，In和As原子在GaAs（001）表面上的扩散常数：分子动力学计算
- 作者：A.Palma;E.Semprini;A.Talamo;N.Tomassini
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- surface diffusion;
- gallium arsenide;
12.Dynamics of partial dislocations in silicon

机译：硅中部分位错的动力学
- 作者：L.B.Hansen;K.Stokbro;B.I.Lundqvist;K.W.Jacobsen
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- partial dislocations;
13.Structure models of the 'C-type' defect on Si(001)

机译：Si（001）上“ C型”缺陷的结构模型
- 作者：Takehide Miyazaki;Tsuyoshi Uda;Kiyoyuki Terakura
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- C-type defect;
- defect formation;
- silicon;
- surface defects;
14.In situ spectroscopic ellipsometry: present status and future needs for thin film characterisation and process control

机译：原位光谱椭圆偏振法：薄膜表征和工艺控制的现状和未来需求
- 作者：Pierre Boher;Jean Louis Stehle
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- spectroscopic ellipsometry;
- thin films;
- real time;
- film deposition;
15.Conductance simulation through single atom junctions at the scanning tunnelling microscope

机译：在扫描隧道显微镜上通过单原子结进行电导模拟
- 作者：L.Jurczyszyn;N.Mingo;F.Flores
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- conductance;
- tunelling;
16.A computationally efficient differentiable Tight-Binding energy functional

机译：计算有效的微分紧束缚能函数
- 作者：A.P.Horsfield
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- tight binding;
- molecular dynamics;
- linear scaling;
- silicon;
17.Oxygen content of substrates and tunnel oxide quality: an in-line systematic analysis

机译：基材的含氧量和隧道氧化物的质量：在线系统分析
- 作者：E.Sottocasa;F.Illuzzi;D.Nahmad;M.L.Polignano
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- oxygen;
- tunnel silicon oxide;
- light point defects;
- electrical measurements;
18.Optical absorption coefficient of polycrystalline silicon with very high oxygen content

机译：氧含量很高的多晶硅的光吸收系数
- 作者：J.M.Serra;R.Gamboa;A.M.Vallera
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- optial properties;
- solar cells;
19.Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods

机译：氧沉淀前体和硅中铜和镍沉淀优先成核的尺寸阈值：通过少数载流子寿命方法检测铜和镍污染
- 作者：A.Bazzali;G.Borionetti;R.Orizio;D.Gambaro;R.Falster
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- copper;
- nickel;
- oxygen;
- silicon;
20.Post-growth diffusion of Be doped InGaAs epitaxial layers: experimental and simulated distributions

机译：掺杂InGaAs外延层的生长后扩散：实验和模拟分布
- 作者：S.Koumetz;J.Marcon;K.Ketata;M.Ketata;F.lefebvre;P.Martin;P.Launay
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- diffusion;
- depth profile;
- InGaAs;
- diffusivity;
- activation energy;
- Be;
- fermi-level;
21.Quantum chemical simulations of the optical properties and diffusion of electron centres in MgO crystals

机译：MgO晶体的光学性质和电子中心扩散的量子化学模拟
- 作者：E.A.Kotomin;M.M.Kuklja;R.I.Eglitis;A.I.Popov
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- quantum chemical simulations;
- diffusion;
- magnesium oxide;
- optical properties;
22.Si-H stretch modes of hydrogen-vacancy defects in silicon

机译：硅中氢空位缺陷的Si-H拉伸模式
- 作者：B.Bech Nielsen;L.Hoffmann;M.Budde
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- hydrogen;
23.Surface mode excitation in platelet SiO_x precipitates in silicon

机译：血小板SiO_x中的表面模式激发在硅中沉淀
- 作者：A.Sassella;B.Pivac;T.Abe;A.Borghesi
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- infrared spectroscopy;
- silicon;
- surface phonons;
- thin films;
24.surface morphology due to enhanced migration in heteroepitaxial growth of compound semiconductors

机译：表面形态由于化合物半导体异质外延生长中迁移的增强而引起
- 作者：M.Djafari Rouhani;A.M.Gue;R.Malek;G.Bouyssou;D.Esteve
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- semiconductors;
- heteroepiaxial growth;
- monte carlo technique;
- valence force field approximation;
25.Stress-induced oxygen precipitation in Cz-Si

机译：应力诱导氧在Cz-Si中的沉淀
- 作者：A.Misiuk;B.Surma;J.hartwig
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- high pressure;
- oxygen precipitation;
- defect formation;
26.Structural particularities of carbon-incorporated Si-Ge heterostructures

机译：碳结合的Si-Ge异质结构的结构特点
- 作者：C.Guedj;D.Bouchier;P.Boucaud;G.Hincelin;X.Portier;A.LHoir;S.Bodnar;J.-L.Regolini
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- germanium;
- carbon;
- Si-Ge-C alloy;
- chemical vapour deposition;
- strain;
27.Simulations of thin film deposition from atomic and cluster beams

机译：原子束和团簇束薄膜沉积的模拟
- 作者：G.H.Gilmer;C.Roland;D.Stock;M.Jaraiz;T.Diaz de la Rubia
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- Cluster beams;
- molecular dynamics;
- molecular beam epitaxy;
- amorphous films;
28.A parallel implementation of tight-binding molecular dynamics

机译：紧密结合分子动力学的并行实现
- 作者：Luciano Colombo;William Sawyer
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- tight-binding molecular dynamics;
- parallel computing;
29.Supersaturated carbon in silicon and silicon/germanium alloys

机译：硅和硅/锗合金中的过饱和碳
- 作者：H.J.Osten
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- supersaturation;
- carbon;
- silicon;
- alloys;
30.A thermodynamic model for hte growth of buried oxide layers by thermal oxidation

机译：通过热氧化生长掩埋氧化物层的热力学模型
- 作者：E.Schroer;S.Hopfe;J.-Y.Huh;U.Goesele
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- thermodynamic;
- diffusion;
- kinetics;
- silicon;
31.Anomalous oxygen diffusivity and the early stages of silicon oxidation

机译：氧扩散率异常和硅氧化的早期阶段
- 作者：G.F.Cerofolini;G.La Bruna;L.Meda
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- oxidation;
- diffusion;
- silicon;
- silicon oxide;
32.Etherogeneous precipitation in oxygen-implanted silicon

机译：氧注入硅中的均相沉淀
- 作者：G.F.Cerofolini;S.Bertoni;L.Meda;C.Spaggiari
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- semiconductor-insulator-semiconductor structures;
- silicon oxides;
- silicon;
33.From atomic parameters to anisotropic etching diagrams

机译：从原子参数到各向异性蚀刻图
- 作者：N.Moldovan;Mihaela Ilie
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- monte carlo program;
- anisotropic etching;
- etching;
- silicon;
34.Heterocrystaline SiC: ab inito calculations for superlattices of combinations of cubic and hexagonal SiC

机译：杂晶SiC：立方和六方SiC组合的超晶格的从头算
- 作者：Peter Kaeckell;Friedhelm;Behcstedt
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- superlattice;
- silicon carbide;
- heterocrystalline;
35.Elastic constants in defected and amorphous silicon by tight-bnding molecular dynamics

机译：通过紧密结合的分子动力学，缺陷和非晶硅中的弹性常数
- 作者：Guido De Sandre;Luciano Colombo;Carlo Bottani
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- elastic constants;
- molecular dynamics;
- tight-binding;
- amorphous materials;
36.Hydrogen passivation of gold centers i nsilicon

机译：硅中金中心的氢钝化
- 作者：Einar Oe.Sveinbjoernsson;Olof Engstroem
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- Au-H complexes;
- Au passivation;
37.Grain boundary sliding: an ab initio simulation

机译：晶界滑动：从头算
- 作者：C.Molteni;G.P.Francis;M.C.Payne;V.Heine
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- sliding;
- germanium;
- ab initio simulations;
- frain boundaries;
38.Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formation

机译：直拉硅晶体生长过程中的热历史对OISF核形成的影响
- 作者：M.Porrini;P.Rossetto
- 会议名称：《》 | 1995年
- czochralski silicon;
- stacking fault;
- thermal history;
- carrier lifetime;
39.Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

机译：红外散射层析成像技术研究处理后的硅片中与氧沉淀有关的晶体缺陷
- 作者：G.Kissinger;J.Vanhellemont;E.Simoen;C.Claeys;H.Richter
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- crystal defects;
- silicon wafers;
- infrared light scattering tomography;
- silicon oxide precipitates;
40.Interfacial effects during ion beam processing of metals

机译：金属离子束加工过程中的界面效应
- 作者：R.S.Averback;Mai Ghaly;P.Bellon
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- ion beam processing;
- sputtering;
- ion implantation;
- ion bombardment;
- interfacial roughness;
41.Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

机译：氧和碳对硅中辐射缺陷的产生和an灭的影响
- 作者：M.-A.Trauwaert;J.Vanhellemont;H.E.Maes;A.-M.Van Bavel;G.Langouche;A.Stesmans;P.Clauws
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- oxygen;
- carbon;
- silicon;
42.Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

机译：氧和氮对单晶硅中点缺陷聚集的影响
- 作者：W.v.Ammon;P.Dreier;W.Hensel;U.Lambert;L.Koester
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon crystals;
43.Light impurities and their interactions in silicon

机译：轻杂质及其在硅中的相互作用
- 作者：R.C.Newman
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- impurities;
- silicon;
44.Microscopic theory of colloid formation in solids under irradiation

机译：辐照下固体中胶体形成的微观理论
- 作者：E.A.Kotomin;V.N.Kuzovkov
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- frenkel defects;
- alkalihalides;
- clusters;
- defect formation;
- diffusion nucleaation;
45.Large-scale molecular dynamics simulations of fracture growth in alloys

机译：合金中裂纹扩展的大规模分子动力学模拟
- 作者：W.C.Morrey;L.T.Wille
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- fracture growth;
- molecular dynamics;
- metallic alloys;
- parallel computation;
46.Molecualr dynamics study for diffusion process in amorphous and supercooled liquid Zr_(67)Ni_(33) alloys

机译：非晶态和过冷液态Zr（67）Ni_（33）合金扩散过程的分子动力学研究
- 作者：Tomoyasu Aihara;Yoshiyuki Kawazoe;Tsuyoshi Masumoto
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- molecular dynamics;
- thermal vibration diffusion;
- amorphous alloy;
47.Characterization of SOI-SIMOX structures using Brillouin light scattering

机译：布里渊光散射表征SOI-SIMOX结构
- 作者：G.Ghislotti;A.Gagliardi;C.E.Bottani;S.Bertoni;G.F.Cerofolini;L.Meda
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon on insulator structures;
- SIMOX;
48.Binding and diffusion of an Al adatom on the hydrogen-terminated Si(100) surface

机译：Al原子在氢封端的Si（100）表面上的结合和扩散
- 作者：Yoshiaki Tanida;Minoru Ikeda
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- Al binding;
- Al diffusion;
- hydrogen termination;
- silicon surface;
- aluminum adsorption;
- surface structure;
49.New oxygen-related EPR spectra in proton-irradiated silicon

机译：质子辐照硅中新的氧相关EPR谱
- 作者：Kh.A.Abdullin;B.N.Mukashev;A.M.Makhov;Yu.V.Gorelkinskii
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- electron paramagnetic resonance;
- silicon;
- oxygen;
- bistable defect;
50.Bonding and diffusion in hydrogenated amorphous silicon by tight-binding molecular dynamics

机译：通过紧密结合的分子动力学在氢化非晶硅中键合和扩散
- 作者：Stefano Lanzavecchia;Luciano Colombo
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- computer simulations;
- tight-binding;
- diffusion;
- structural properties;
- molecular dynamics;
51.Crack propagation and fracture in ceramic films--million atom molecular dynamics simulations on parallel computers

机译：陶瓷膜中的裂纹扩展和断裂-并行计算机上的百万原子分子动力学模拟
- 作者：Priya Vashishta;Aiichiro Nakano;Rajiv K.Kalia;Ingvar Ebbsjoe
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- crack propagation;
- fracture;
- ceramic films;
- silicon nitride;
- silicon oxide;
- molecular dynamics;
52.Defect levels in n-silicon after high energy and high dose implantation of proton

机译：高能和高剂量质子注入后n硅中的缺陷水平
- 作者：J.F.Barbot;C.Blanchard;E.Ntsoenzok;J.Vernois
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- defect formation;
- ion implantation;
- electrical measurements;
53.Optical investigation of Si_(1-y)C_y alloys (0<=y<=0.015)

机译：Si_（1-y）C_y合金的光学研究（0 <= y <= 0.015）
- 作者：K.Pressel;B.Dietrich;H.Ruecker;M.Methfessel;H.J.Osten
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- heterostructures;
- semiconductors;
54.Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

机译：高温退火直拉硅片和外延片的比较
- 作者：D.Graef;U.Lambert;M.Brohl;A.Elhert;R.Wahlich;P.Wagner
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- annealing;
- COP;
- epitaxial silicon;
- GOI;
- silicon;
55.Comparison of N- and P-type silicon irradiated by MeV protons and post-annealed at different temperatures

机译：MeV质子辐照并在不同温度下进行后退火的N型和P型硅的比较
- 作者：E.Ntsoenzok;P.Desgardin;J.F.Barbot;J.Vernois;D.B.Isabelle
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- n-type silicon;
- p-type silicon;
- annealing;
- microelectronics;
56.Cross-sectional atomic force imaging of semiconductor heterostructures

机译：半导体异质结构的截面原子力成像
- 作者：B.Dwir;F.Reinhardt;G.Biasiol;E.Kapon
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- semiconductor;
- heterostructures;
- quantum wells;
- atomic-force microscopy;
57.Effects of doping on the electronic properties of semiconducting iron disilicide

机译：掺杂对半导体二硅化铁电子性能的影响
- 作者：Y.Tomm;L.Ivaneko;K.Irmscher;St. Brehme;W.Henrion;I.Sieber;H.Lange
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- doping;
- semiconductors;
- iron disilicide;
- silicides;
- doping effects;
58.Effects of annealing in oxygen and nitrogen atmosphere on F.Z. silicon wafers

机译：氧气和氮气气氛中的退火对F.Z.的影响硅片
- 作者：N.Gay;F.Floret;S.Martinuzzi;L.Roux;J.Arnould;G.Mathieu
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- nitrogen;
- oxygen;
- annealing;
- silicon;
59.Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure

机译：金刚石（111）和（100）表面：从头开始研究原子和电子结构
- 作者：A.Scholze;W.G.Schmidt;P.Kaeckell;F.Bechstedt
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- diamond;
- surface structure;
- Band structure calculations;
60.Influence of oxygen on the recombination strength of dislocaiton in silicon wafers

机译：氧对硅晶片中位错复合强度的影响
- 作者：J.J.Simon;I.Perichaud
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- oxygen;
- dislocation;
- silicon crystals;
61.The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clusters

机译：快速扩散的二聚体在氧损失中的作用以及热供体与小氧簇的关联
- 作者：S.A.McQuaid;R.C.Newman;E.Munoz
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- thermal donors;
- oxygen clusters;
- oxygen diffusion;
62.The (001) antiphase boundaries at the order-disorder transition of Cu_3Au

机译：Cu_3Au有序无序跃迁的（001）反相边界
- 作者：H.M.Polatoglou
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- monte carlo method;
- order-disoder transition;
- wetting;
- segregation;
63.Simulation of oxygen precipitation in CZ-Si crystal during the pulling process

机译：拉制过程中CZ-Si晶体中氧沉淀的模拟
- 作者：K.Nakamura;T.Saishuoji;T.Kubota;T.Tanimura
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- defect formation;
- silicon;
- silicon oxide;
- diffusion;
64.The fracture strength of nitrogen doped silicon wafers

机译：氮掺杂硅片的断裂强度
- 作者：Jan Vedde;Peter Gravesen
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- fracture strength;
- silicon;
- structure defects;
- nitrogen;
- surface stress;
65.The effect of carbon on diffusion in silicon

机译：碳对硅中扩散的影响
- 作者：P.A.Stolk;H.-J.Gossmann;D.J.Eaglesham;J.M.Poate
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- carbon;
- diffusion;
- silicon;
- ion implantation;
66.The nitrogen-pair oxygen defect in silicon

机译：硅中的氮对氧缺陷
- 作者：F.Berg Rasmussen;S.Oberg;R.Jones;C.Ewels;J.Goss;J.Miro;P.Deak
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- defect formation;
- oxygen;
- nitrogen;
67.Thermal anneal activation of defects in hydrogen plasma-treated silicon

机译：氢等离子体处理的硅中缺陷的热退火活化
- 作者：C.W.Nam;A.Tanabel;S.Ashok
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- defect formation;
- plasma procesisng;
- silicon;
- hydrogen;
68.The tight-binding Ising model for surface segregation in binary alloys: formalism and applications

机译：二元合金表面偏析的紧密结合伊辛模型：形式主义与应用
- 作者：S.Ouannasser;H.Dreysse;L.T.Wille
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- ising model;
- surface segregation;
- monte carlo simualtions;
- metallic alloys;
69.Molecular dynamics simulation of a nuclear waste glass matrix

机译：核废玻璃基质的分子动力学模拟
- 作者：J.M.Delaye;D.Ghaleb
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- molecular dynamics;
- nuclear glass;
- density;
- viscosity;
70.Magnetic resonance spectroscopy of hydrogen-passivated double donors in silicon

机译：硅中氢钝化双供体的磁共振波谱
- 作者：J.S.Zevenbergen;Yu.V.Martynov;F.Berg Rasmussen;T.Gregorkiewicz;C.A.J.Ammerlaan
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- hydrogen;
71.Theoretical studies of implanted muons in organic magnets

机译：在有机磁体中注入μ子的理论研究
- 作者：R.M.Valladares;M.I.J.Probert;A.J.Fisher
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- implanted muonsi;
- organic magnets;
- electronic states;
72.Monte Carlo simulation of cuprate oxides

机译：铜氧化物的蒙特卡洛模拟
- 作者：S.Nicoletti;G.Mattei
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- monte carlo methods;
- epitaxy of thin films;
- superconductivity perovskites;
73.Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

机译：本征点缺陷对CZ硅晶片吸气中心形貌的影响
- 作者：K.L.Enisherlova;T.F.Rusak;M.G.Milvidskii;V.J.Reznick
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- gettering;
- silicon;
74.Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes

机译：初始间隙氧浓度对电子辐照硅结二极管电学特性的影响
- 作者：E.Simoen;J.P.Dubuc;J.Vanhellemont;C.Claeys
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- p-n junctions;
- oxygen;
- silicon;
- noise processes and phenomena;
75.Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells

机译：碳和氧对硅太阳能电池中磷和铝共吸收的影响
- 作者：K.Mahfoud;M.Loghmarti;J.C.Muller;P.Siffert
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- solar cells;
- silicon;
- oxygen;
- doping effects;
76.Luminescence centres containing two, three and four hydrogen atoms in radiation-damaged silicon

机译：辐射损坏的硅中包含两个，三个和四个氢原子的发光中心
- 作者：A.N.Safonov;E.C.Lightowlers
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- hydrogen;
- Radiation damage;
- photoluminescence;
- defects;
77.Non-doping light impurities silicon for solar cells

机译：用于太阳能电池的非掺杂轻质杂质硅
- 作者：B.Pivac;A.Sassella;A.Borghesi
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- solar cells;
78.Monte Carlo simualtion of the growth of semiconductor quantum wires

机译：半导体量子线生长的蒙特卡洛模拟
- 作者：Vladimir Mitin;Saulius Kersulis
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- monte carlo simulation;
- semiconductors;
79.Cavities owing to hydrogen in Si single crystals grown by continuously charging CZ method

机译：连续充电CZ法生长的Si单晶中由于氢引起的空穴
- 作者：E.Iino;K.Takano;M.Kimura;H.yamagishi
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- cavities;
- czochralski method;
- hydrogne;
- silicon;
80.Characterization and simulation of organic adsorbates on the Si(100)(2x1)-surface using photoelectron spectroscopy and quantum mechanical calculations

机译：利用光电子能谱和量子力学计算表征和模拟Si（100）（2x1）-表面上的有机吸附物
- 作者：Th.Kugler;Ch.Ziegler;W.Goepel
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- organic substances;
- chemisorption;
- photoelectron spectroscopy;
81.Bandgap widening in quantum sieves

机译：量子筛的带隙加宽
- 作者：G.F.Cerofolini;L.Meda;D.Bisero;F.Corni;G.Ottaviani;R.Tonini
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- band structure calculations;
- quantum structures;
- silicon;
82.Carbon in beta-rhombohedral boron

机译：β-菱面体硼中的碳
- 作者：Helmut Werheit;Udo Kuhlmann;Torsten Lundstroem
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- carbon;
- boron;
- electron transitions;
- optical property;
83.Calculated high resolution electron microscopy images of nano-sized structures obtained by molecular dynamics

机译：通过分子动力学获得的纳米结构的高分辨率电子显微镜图像
- 作者：G.Mattei
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- high resolution electron microscopyl molecular dynamics;
- nano-sized structures;
84.Activation energies for the formation of oxygen clusters related to the thermal donors in silicon

机译：与硅中的热供体有关的形成氧簇的活化能
- 作者：T.Hallberg;J.L.Lindstroem
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- oxygen;
- silicon;
- thermal donors;
85.Coupled atom and electron motions on the Si(001) surface from first-principles molecular dynamics and their visualization by a video

机译：第一性原理分子动力学及其在Si（001）表面上原子和电子的耦合运动及其视频可视化
- 作者：E.P.Stoll;A.Baratoff;A.Mangili;D.Maric
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- electron motion;
- molecular dynamics;
- surface dynamics;
- silicon;
86.New trends in atomic scale simualtion of wet chemical etching of silicon with KOH

机译：KOH湿法化学刻蚀硅原子尺度模拟的新趋势
- 作者：H.Camon Z.Moktadir;M.Djafari-Rouhani
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- etching;
- silicon;
- surface roughness;
87.Passivation effect of (NH_4)_2S_x treatment on GaAs surface before photo-resist and O_2 processes

机译：（NH_4）_2S_x处理在光刻胶和O_2处理之前对GaAs表面的钝化效果
- 作者：Kyung-Soo Suh;Jong-Lam Lee;Hyung-Ho Park;Chan-Ho Kim;Jae-jin Lee;Kee-Soo Nam
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- x-ray photoelectron spectroscopy;
- thermal stability;
- passivation effects;
- gallium arsenide;
88.Optical investigation of some statistic and kinetic aspects of the nucleation and growth of InAs islands on GaAs

机译：GaAs上InAs岛形核和生长的一些统计和动力学方面的光学研究
- 作者：J.M.Gerard;O.Carbrol;J.Y.Marzin;N.Lebouche;J.M.Moison
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- nucleation;
- kinetics;
- gallium arsenide;
- molecular beam epitaxy;
- quantum box;
- indium arsenide;
89.Computational materials design and processing: perspectives for atomistic approaches

机译：计算材料的设计和处理：原子方法的观点
- 作者：E.Wimmer
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- materials;
- atomic scale;
- simulations;
- density functional theory;
90.Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZ-Si crystals

机译：确定CZ-Si晶体中小的已生成氧沉淀物中环OSF成核的标准
- 作者：Kieran Marsden;Tadashi Kanda;Masahiko Okui;Masataka Hourai;Tatsuhiko Shigematsu
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- annealing;
- defect formation;
- oxygen;
- silicon;
91.Detailed analysis of beta-siC formation by high dose carbon ion implantation in silicon

机译：高剂量碳离子注入硅中形成β-siC的详细分析
- 作者：A.Romano-Rodriguez;C.Serre;L.Calvo-Barrio;A.Perez-Rodriguez;J.R.Morante;R.Koegler;W.Skorupa
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- ion implantation;
92.Effect of nitrogen contamination by crucible encapsulation on polycrystalline silicon material quality

机译：坩埚封装对氮的污染对多晶硅材料质量的影响
- 作者：S.Binetti;M.Acciarri;C.Savigni;A.Brianza;S.Pizzini;A.Musinu
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- nitrogen;
- silicon nitride;
93.Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mm

机译：评估直径为200 mm的HMCZ Si单晶的质量
- 作者：E.Iino;K.Takano;M.Kimura;H.Yamagishi
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- device fabrication;
94.Evolution of the morphology of annealed, bulk MgO (100) substrate surfaces

机译：退火的块状MgO（100）衬底表面形态的演变
- 作者：Simon L.King;Mark R. Wilby;Ian W.Boyd
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- annealing;
- magnesium oxide;
- thin-film deposition;
- AFM;
95.Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy

机译：通过SIRM和FTIR光谱检测到退火的CZ硅晶片中的氧气沉淀
- 作者：Caroline Veve;Michael Stemmer;Santo Martinuzzi
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon (Cz);
- oxygen precipitates;
- FTIR;
- SIRM;
96.Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor

机译：用电化学氧传感器测量直拉硅熔体中的氧分布
- 作者：A.Seidl;R.Marten;G.Mueller
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- oxygen;
- silicon;
- ionic conduction;
97.Ordering tendencies in Fe-Al alloys in magnetic and non-magnetic models

机译：磁性和非磁性模型中Fe-Al合金的有序趋势
- 作者：S.K.Bose;J.Kudrnovsky;V.Drchal;O.Jepsen;O.K.Andersen
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- electron states in alloys;
- order-disorder transition;
- alloy phase stability;
98.Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon

机译：氢和氧对硅熔体性质和晶体生长的影响
- 作者：Atsushi Ikari;Hitoshi Sasaki;Eiji Tokizaki;Kazutaka Terashima;Shigeyuki Kimura
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- silicon;
- hydrogen;
- melt;
- grown-in defects;
99.Oxygen related defects in germanium

机译：锗中与氧气有关的缺陷
- 作者：P.Clauws
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- germanium;
- oxygen;
- silicon;
- infrared spectroscopy;
100.Oxygen redistribution during diffusion in thin silicon layers

机译：硅薄层扩散过程中的氧气重新分布
- 作者：J.M.Serra;A.M.Vallera
- 会议名称：《Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》 | 1995年
- diffusion;
- oxygen;
- silicon;
- thin films;