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Royal Microscopical Society conference on microcopy of semiconducting materials

召开年：1997
召开地：Oxford(GB)
出版时间：-

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1.The analysis of nanopipes and inversion domains in GaN thin films

机译：GaN薄膜中的纳米管和反转畴的分析
- 作者：D Cherns;W T Young;M A Saunders;F A Ponce;S Nakamura
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
2.The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging

机译：使用高角度环形暗场成像表征半导体中的超薄掺杂层
- 作者：C P Liu;C B Boothroyd;P D Brown;C J Humphreys
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
3.The effect of doping and formation conditions on the microstructure of porous silicon

机译：掺杂和形成条件对多孔硅微观结构的影响
- 作者：G Wakefield;JL Hutchison;PJ Dobson
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
4.The effect of substrate misorientation on atomic ordering in Ga_(0.52)In_(0.48)P epilayers grown on GaAs (001) substrates by Gas-Source MBE

机译：气体源MBE在GaAs（001）衬底上生长的Ga_（0.52）In_（0.48）P外延层中衬底取向错误对原子有序化的影响
- 作者：C Meenakarn;A E Staton-Bevan;M D Dawson;G Duggan;A H Kean;S P Najda
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
5.The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysilicon

机译：氟对掺砷非晶硅和多晶硅外延生长的影响，氯对掺砷多晶硅外延生长的影响
- 作者：C D Marsh;N E Moiseiwitsch;G R Booker;P Ashburn
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
6.The effects of surface relaxation and ion thinning on delta-doped semiconductor cross-sections

机译：表面弛豫和离子稀化对掺ta半导体截面的影响
- 作者：C P Liu;P D Brown;C B Boothroyd;C J Humphreys
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
7.The impact of structural non-uniformity on the operation of (Al_yGa_(1-y))_xIn_(1-x)P quantum well lasers at high strain

机译：结构非均匀性对高应变下（Al_yGa_（1-y））_ xIn_（1-x）P量子阱激光器工作的影响
- 作者：P C Mogensen;S A Hall;U Bangert;P Dawson;P M Smowton;P Blood
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
8.The stacking faults in GaSb/(001)GaAs heterostructure

机译：GaSb /（001）GaAs异质结构中的堆垛层错
- 作者：Andre M Rocher
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
9.The use of electron holography for composition profiling of semiconductor heterostructures

机译：电子全息术在半导体异质结构组成分析中的应用
- 作者：P A Midgley;J Barnard;D Cherns
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
10.The use of transmitted color and interference fringes for TEM sample preparation of silicon

机译：透射色和干涉条纹在硅TEM样品制备中的用途
- 作者：J P McCaffrey
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
11.Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructures

机译：GaAs / AlGaAs异质结构中FeAs沉淀的透射电镜研究
- 作者：J Katcki;M Shiojiri;T Isshiki;K Nishio;Y Yabuuchi;N Y Jin-Phillipp
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
12.Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice

机译：外延铍-硫属化物基超晶格的透射电子显微镜研究
- 作者：Th Walter;A Rosenauer;D Gerthsen;F Fischer;R Gall;Th Litz;A Wang;G Landwehr
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
13.Transmission electron microscopy, X-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructures

机译：InGaAs / GaAs异质结构的透射电子显微镜，X射线衍射和光致发光研究
- 作者：J Katcki;K Reginski;M Bugajski;J Adamczewska;W Lewandowski;J Ratajczak;W Rzodkiewiza;J A Kozubowski
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
14.Tungsten and tungsten nitride Schottky contacts to 4H-SiC

机译：钨和氮化钨肖特基接触4H-SiC
- 作者：B Pecz;A Sulyok;G Radnoczi;O Noblanc;C Arnodo;S Cassette;C Brylinski
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
15.Twinning of As precipitates in LT-GaAs

机译：孪晶在LT-GaAs中沉淀
- 作者：Ch Dieker;S Ruvimov;H Sohn;J Washburn;Z Liliental-Weber
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
16.Two- and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopy

机译：使用透射电子显微镜对高级LOCOS隔离进行二维和三维表征
- 作者：R Beanland;D J Bazley;S K Jones;B Scaife
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
17.X-ray topography of single crystal zinc germanium phosphide

机译：单晶磷化锌锗的X射线形貌
- 作者：M K Saker;A M Keir;A W Vere;L L Taylor
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
18.Antiphase Boundaries in GaAs/Ge Solar Cells

机译：GaAs / Ge太阳能电池中的反相边界
- 作者：C Hardingham;D B Holt;L Lazzarini;M Mazzer;L Nasi;B Raza;C Zanotti-Fregonara
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
19.Carrier recombination at defects in silicon: the effect of transition metals and hydrogen passivation

机译：硅缺陷中的载流子复合：过渡金属和氢钝化的影响
- 作者：P R Wilshaw;A M Blood;C F Braban
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
20.Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence

机译：用不同技术生长的GaN的晶体缺陷和光学特性：堆叠缺陷相关的发光
- 作者：G Salviati;C Zanotti-Fregonara;M Albrecht;S Christiansen;HP strunk;M Mayer;A Pelzmann;M Kamp;KJ Ebeling;MD Bremser;RF Davis;YG Shreter
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
21.Decomposition analysis of Ga_xIn_(1-x)As_yP_(1-y) heterostructures by STEM

机译：Ga_xIn_（1-x）As_yP_（1-y）异质结构的STEM分解分析
- 作者：C Mendorf;G Brockt;Q Liu;F Schulze;E Kubalek;I Rechenberg;A Knauer;A Behres;M Heuken;K Heime;H Lakner
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
22.EBIC studies of the electrical barriers in striated ZnS platelets exhibiting the anomalous photovoltaic effect

机译：EBIC研究横纹ZnS血小板中的电阻挡层表现出异常的光伏效应
- 作者：D B Holt;Y Brada
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
23.In situ TEM study of the evolution of CoSi_2 precipitates during annealing and ion irradiation

机译：退火和离子辐照过程中CoSi_2析出物的原位TEM研究
- 作者：M Palard;M-O Ruault;H Bernas;M Strobel;K-H Heinig
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
24.Measurement of silicon wafer rougness by atomic force microscopy: An interlaboratory comparison

机译：用原子力显微镜测量硅晶片的粗糙度：实验室间比较
- 作者：A J Pidduck;A B J Smout;P Wagner;M Suhren;D C Gupta;S Yang
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
25.A mechanism for 'double half dislocation loops' nucleation in low misfit epitaxial Ge_x Si_(1-x) on Si

机译：Si上低失配外延Ge_x Si_（1-x）中“双半位错环”成核的机制
- 作者：P B Hirsch
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
26.REBIC studies of electrical barriers in varistor ZnO

机译：压敏电阻ZnO中电势垒的REBIC研究
- 作者：D Halls;D B Holt;C Leach;J D Russell
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
27.STEM characterisation of MOVPE-grown (In, Ga) N quantum wells

机译：MOVPE生长的（In，Ga）N量子阱的STEM表征
- 作者：G Btockt;C Mendorf;A Radefeld;F Scholz;H Lakner
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
28.Strain-induced vertical ordering effects of islands in LPCVD-grown Si_(1-x)Ge_x/Si-bilayer structures on Si(001)

机译：LPCVD生长的Si_（1-x）Ge_x / Si双层结构在Si（001）上的应变诱导的垂直排列岛效应
- 作者：K Tillmann;B Rahmati;H Trinkaus;W Jager;A Hartmann;R Loo;L Vescan;K Urban
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
29.Study of the structural and optical properties of ordered domains in GaInP alloys

机译：GaInP合金中有序畴的结构和光学性质的研究
- 作者：L Nasi;F Fermi;C Ferrari;L Francesio;L Lazzarini;C Zanotti-Fregonara;S Pellegrino;G Salviati
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
30.Surface damage of semiconductor TEM samples prepared by focused ion beams

机译：聚焦离子束制备的半导体TEM样品的表面损伤
- 作者：J F Walker;R F Broom
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
31.TEM observation of degraded InGaAsP MQW laser diodes

机译：退化的InGaAsP MQW激光二极管的TEM观察
- 作者：T Matsuda;T Namegaya;A Kasukawa;Y Ikegami;N Tsukiji;T Ijichi;F Iwase
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
32.The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wires

机译：扫描阴极发光在GaV / AlGaAs V槽量子线MOVPE生长中的作用
- 作者：G M Williams;M Steer;A G Cullis;C R Whitehouse;M S Skolnick;J S Roberts
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
33.Electron microscopy characterization of low-dimensional semiconductor structures grown on V-grooved substrates

机译：V形沟槽衬底上生长的低维半导体结构的电子显微镜表征
- 作者：A Gustafsson;G Biasionl;B Dwir;F Reinhardt;E Kapon
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
34.Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si_xGe_(1-x) films

机译：Si_xGe_（1-x）薄膜中的应变诱导表面波纹形成和位错倍增的机理
- 作者：D E Jesson;K M Chen;S J Pennycook;T Thundat;R J Warmack
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
35.A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells

机译：SiGe / Si量子阱的低压化学气相沉积中互扩散和锗偏析的研究
- 作者：T Walther;C J Humphreys;A G Cullis;D J Robbins
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
36.Dislocation behaviour in strained layer interfaces

机译：应变层界面中的位错行为
- 作者：P J Goodhew;G MacPherson
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
37.On the growth of high quality relaxed Si_(1-x)Ge_x layers on Si by vapour phase epitaxy

机译：气相外延法在硅上生长高质量的弛豫Si_（1-x）Ge_x层
- 作者：A J Pidduck;D J Robbins;D Wallis;G M Williams;A C Churchill;J P Newey;C Crumpton;P W Smith
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
38.Practical epitaxial silicide technologies for ULSI applications

机译：适用于ULSI应用的实用外延硅化物技术
- 作者：R T Tung;K Inoue
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
39.Structural characterisation of GaN layers: influence of polarity and strain release

机译：GaN层的结构表征：极性和应变释放的影响
- 作者：J-L Rouviere;M Arlery;A Bourret
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
40.TEM studies of processed Si device materials

机译：加工硅器件材料的TEM研究
- 作者：J Vanhellemont;H Bender;J Van Landuyt
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
41.The structures of extended defects in Si and other materials studied by HRTEM

机译：HRTEM研究Si等材料中扩展缺陷的结构。
- 作者：S Takeda
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
42.The evolution of electron beam lithography and metrology for semiconductor technologies

机译：半导体技术的电子束光刻和计量学的发展
- 作者：T Matsuo
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
43.Imaging dislocation kinks, their motion and pinning in Si

机译：在Si中成像脱位扭结，运动和固定
- 作者：J C H Spence;H R Kolar;H Alexander
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
44.Self-organisation and defect mechanisms in heteroepitaxial growth

机译：外延生长中的自组织和缺陷机理
- 作者：H P Strunk;M Albrecht;S Christiansen;W Dorsch
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
45.The materials basis behind the telecommunications revolution

机译：电信革命背后的物质基础
- 作者：W F Brinkman
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
46.Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire

机译：Mocvd-Growlow GaN的六角生长小丘（0001）蓝宝石
- 作者：A Mohammed;C Trager-Cowan;P G Middleton;K P ODonnell;W Van Der Stricht;I Moerman;P Demeester;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
47.Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing

机译：通过脱位旋转，反应和退火期间的脱位旋转，反应和发电放松紧张的外延层
- 作者：R Beanland;M A Lourenco;K P Homewood;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
48.Global plastic relaxation of strained-layer superlattices with non-compensated strains

机译：具有非补偿菌株的紧张层超晶格的全球塑料松弛
- 作者：G Patriarche;E V K Rao;A Ougazzaden;F Glas;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
49.Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies

机译：GE岛对Si（001）的成核，生长和尺寸分布：原位STM研究
- 作者：I Goldfarb;J H G Owen;P T Hayden;K Miki;G A D Briggs;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
50.Ion energy effect on surface amorphisation of semiconductor crystals

机译：离子能量效应半导体晶体的表面晶体
- 作者：A Barna;L Toth;B Pecz;G Radnoczi;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
51.Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces

机译：在等离子体蚀刻硅表面上蚀刻损伤后改善外延质量
- 作者：J M Bonar;J Schiz;P Ashburn;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
52.Controlling misfit dislocation generation in strained layer epitaxy by point defect injection

机译：点缺陷注射控制紧张层外延中的错入脱位生成
- 作者：M B Stirpe;D D Perovic;H L Lafontaine;R D Goldberg;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
53.Two- and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopy

机译：使用透射电子显微镜进行先进的LOCOS隔离的两维表征
- 作者：R Beanland;D J Bazley;S K Jones;B Scaife;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
54.Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures

机译：二次电子掺杂对比度成像在INP / INGAASP激光结构中的应用
- 作者：CP Sealy;MR Castell;CL Reynolds;PR Wilshaw;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
55.Structural characteristics of highly ordered (GaIn)P

机译：高度有序（GAIN）P的结构特征
- 作者：J C Jiang;A K Schaper;Z Spika;W Stolz;P Werner;L Toth;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
56.Distribution of Fe and extended defects in Fe-implanted InP

机译：Fe植入INP中Fe和延长缺陷的分布
- 作者：C Frigeri;A Carnera;B Fraboni;A Gasparotto;F Priolo;A Camporese;G Rossetto;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
57.Growth of GaN layers on nitrided GaAs/Si and GaAs/SIMOX composite substrates by OMVPE

机译：OMVPE的氮化GaAs / Si和GaAs / Simox复合基材上的GaN层的生长
- 作者：Chimin Hu;N T Nuhfer;S Mahajan;J W Yang;C J Sun;M Asif Khan;H Temkin;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
58.Developing a methodology for the electron energy-loss spectroscopy of defects in GaN

机译：开发GaN中缺陷的电子能损光谱法
- 作者：M K H Natusch;G A Botton;C J Humphreys;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
59.Kinetic critical thickness for morphological instability in GeSi/Si strained layer epitaxy

机译：基因/ SI紧张层外延的形态不稳定的动力学临界厚度
- 作者：B Bahierathan;D D Perovic;H Lafontaine;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
60.Microstructure study of pure hydrogen RF-sputtered microcrystallized silicon thin films

机译：纯氢镍抗液体溅射微晶薄膜的微观结构研究
- 作者：F Gourbillcau;A Achiq;P Vermaut;P Voivenel;R Rizk
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
61.Quantitative Analysis of Al_(1-x)Ga_xAs heterostructures using EELS

机译：使用鳗鱼的AL_（1-X）GA_XAS异质结构的定量分析
- 作者：K Leifer;P A Buffat;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
62.Defect distribution in compositionally graded epitaxial SiGe layers on Si substrates

机译：Si基板上的合成渐变外延SiGe层中的缺陷分布
- 作者：K Lyutovich;F Ernst;F Banhart;I Silier;A Gutjahr;M Konuma;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
63.Development of a mechanical poly silicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopy

机译：使用TEM，SEM和拉曼光谱法开发用于表面加工微机电系统的机械聚硅层
- 作者：D O King;M C Ward;A G Cullis;D Gardiner;M Bowden
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
64.Heteroepitaxy of cubic GaN: influence of interface structure

机译：立方GaN的异腔：界面结构的影响
- 作者：A Trampert;O Brandt;H Yang;B Yang;KH Ploog;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
65.Heteroepitaxial Si/ErSi_2/Si structures grown in high vacuum

机译：高真空生长的异质轴SI / ERSI_2 / SI结构
- 作者：A Travlos;E Flouda;P Aloupogiannis;N Salamouras;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
66.Orientation dependent growth of TmAs wires in GaAs grown by MBE

机译：由MBE生长的GaAs中TMA线的定位依赖生长
- 作者：A C Wright;M R Bennett;K E Singer;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
67.Advanced scanning near-field optical microscopy of semiconducting materials and devices

机译：高级扫描半导体材料和器件的近场光学显微镜
- 作者：R M Cramer;R Heiderhoff;J Selbeck;L J Balk;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
68.Structural and electronic properties of partially crystallised silicon

机译：部分结晶硅的结构和电子性质
- 作者：P D Brown;J P Smith;W Eccleston;C J Humphreys;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
69.Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates

机译：图案（311）图案的2D结激光结构的阴极发光和EBIC
- 作者：C E Norman;A J North;J H Burroughes;T Burke;D A Ritchie;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
70.Basal and non-basal dislocations in deformed Aluminium Nitride

机译：变形氮化铝的基础和非基础脱位
- 作者：V Feregotto;A George;J P Michel;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
71.TEM characterisation of GaN grown on sapphire

机译：甘蓝在蓝宝石种植的眼镜特征
- 作者：B Pecz;MA di Forte-Poisson;L Toth;G Radnoczi;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
72.Dependence of electron-hole generation function on EBIC contrast of defects

机译：电子孔生成功能对缺陷对比的依赖性
- 作者：MJ Romero;D Araujo;R Garcia;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
73.Electric field dependence of the lateral cathodoluminescence intensity and electron-beam induced current distribution in a GaAs-AlAs single quantum well

机译：横向阴极发光强度和电子束诱导电流分布在GaAs-Alas单量子阱中的电场依赖性
- 作者：U Jahn;J Menniger;H Kostial;R Hey;H T Grahn;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
74.TEM and TED Studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxy

机译：有机金属气相外延生长的订单诱导的GaInp异质结构的TEM和TED研究
- 作者：J H Kim;T-Y Seong;Y S Chun;G B Stringfellow;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
75.Tungsten and tungsten nitride Schottky contacts to 4H-SiC

机译：钨和钨氮化物肖特基触点到4H-SIC
- 作者：B Pecz;A Sulyok;G Radnoczi;O Noblanc;C Arnodo;S Cassette;C Brylinski;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
76.Crack interactions in tensile-strained epilayers

机译：拉伸抗拉丝脱落剂的裂纹相互作用
- 作者：R T Murray;C J Kiely;M Hopkinson;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
77.Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices

机译：INAS和GASB矩阵中MOVPE自组装INSB量子点的结构和光学表征
- 作者：A G Norman;N J Mason;M J Fisher;J Richardson;A Krier;P J Walker;G R Booker;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
78.Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers

机译：连续分级IngaAs / GaAs缓冲液中缺陷，残留应变和形态的相关性
- 作者：L Lazzarini;C Ferrari;S Gennari;A Bosacchi;S Franchi;M Berti;A V Drigo;F Romanato;G Salviati;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
79.A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

机译：一种弹道电子发射显微镜（贝E） - 反应离子蚀刻（RIE）和III-V半导体化学预处理的影响
- 作者：R L Van Meirhaeghe;G M Vanalme;L Goubert;F Cardon;P Van Daele;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
80.Effect of high implantation temperatures on defect formation in 6H-SiC

机译：高植入温度对6H-SIC缺陷形成的影响
- 作者：A A Suvorova;O I Lebedev;A V Suvorov;I O Usov;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
81.Development of a mechanical polysilicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopy

机译：使用TEM，SEM和拉曼光谱法开发用于表面加工微机电系统的机械多晶硅层
- 作者：D O King;M C Ward;A G Cullis;D Gardiner;M Bowden;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
82.Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers

机译：堆叠故障梯形，堆叠故障管和堆叠故障Tetrahedra在ZnSe / GaAs（001）假形骨骼癫痫
- 作者：K K Fung;N Wang;I K Sou;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
83.In-situ HREM Irradiation study of point defect clustering in strained Ge_xSi_(1-x)/(001)Si heterostructure

机译：原位HREM辐照学研究点缺陷聚类在应变GE_XSI_（1-x）/（001）SI异质结构
- 作者：L Fedina;O Lebedev;G Van Tendeloo;J Van Landuyt;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
84.Features of excess arsenic precipitation in LT-GaAs delta-doped with indium

机译：LT-Gaas Delta-掺杂铟的过量砷沉淀的特征
- 作者：N A Bert;V V Chaldyshev;Yu G Musikhin;P Werner;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
85.Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images

机译：用晶格图像的数字分析反混态半导体异质结构的应变测定
- 作者：A Rosenauer;T Remmele;U Fischer;A Forster;D Gerthsen;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
86.The effects of surface relaxation and ion thinning on delta-doped semiconductor cross-sections

机译：表面松弛和离子稀疏对三角掺杂半导体横截面的影响
- 作者：C P Liu;P D Brown;C B Boothroyd;C J Humphreys;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
87.Analytical expression for the kink profile

机译：Kink配置文件的分析表达
- 作者：M E Polyakov;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
88.Polarity study by CBED of GaN films grown on (0001)_(Si) 6H-SiC

机译：在（0001）_（Si）6H-SiC上生长的GaN薄膜的极性研究
- 作者：P Vermaut;P Ruterana;G Nouet;A Salvador;H Morkoc;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
89.The use of transmitted color and interference fringes for TEM sample preparation of silicon

机译：使用传动的颜色和干涉条纹进行硅样品制备
- 作者：J P McCaffrey;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
90.Microstructure study of GaAs quantum wire superlattice

机译：GaAs量子线超晶格的微观结构研究
- 作者：H Matsuhata;X-L Wang;M Ogura;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
91.Preparing TEM sections by FIB: stress relief to straighten warping membranes

机译：用FIB准备TEM部分：应力缓解，拉直翘曲膜
- 作者：J F Walker;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
92.Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBE

机译：INP（001）中的INSB量子点中的自组织过程通过ALMBE
- 作者：J C Ferrer;F Peiro;A Cornet;J R Morante;T Utzmeier;G Armelles;F Briones;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
93.The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysilicon

机译：氟对砷掺杂无定形硅和多晶硅外延再生和氯对砷掺杂多晶硅外延再生的影响
- 作者：C D Marsh;N E Moiseiwitsch;G R Booker;P Ashburn;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
94.Cathodoluminescence studies of striated ZnS platelets and related II-VI crystals

机译：条纹ZnS血小板及其相关II-VI晶体的阴极发光研究
- 作者：Y Brada;D B Holt;S Mardix;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
95.TEM assessment of the growth mode and strain state of capped InSb dots grown on InP (001) substrates

机译：在INP（001）基板上增长的加盖INSB点的生长模式和应变状态的TEM评估
- 作者：J C Ferrer;F Peiro;A Cornet;J R Morante;T Utzmeier;G Grmelles;F Briones;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
96.Recombination properties of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures: a cathodoluminescence study.

机译：假形态藻类/ ingaAs / GaAs异质结构的重组性能：阴极致发光研究。
- 作者：N Fossaert;S Dassonneville;B Sieber;JL Lorriaux;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
97.A reassessment of Te-doped GaAs

机译：重新评估te-掺杂的gaas
- 作者：C Frigeri;J L Weyher;J Jimenez;P Martin;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
98.REBIC studies of grain boundaries in II-VI compounds

机译：II-VI化合物中晶界的革莱科研究
- 作者：D B Holt;B Raza;A Wojcik;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
99.The effect of substrate misorientation on atomic ordering in Ga_(0.52)In_(0.48)P epilayers grown on GaAs (001) substrates by Gas-Source MBE

机译：通过气源MBE在GaAs（001）基板上生长的Ga_（0.52）In_（0.48）的原子排序对原子序的影响
- 作者：C Meenakarn;A E Staton-Bevan;M D Dawson;G Duggan;A H Kean;S P Najda;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年
100.Degradation of electron-beam-pumped Zn_(1-x)Cd_xSe/ZnSe GRINSCH blue-green lasers

机译：电子束泵浦Zn_（1-X）CD_XSE / ZnSe Grinsch蓝绿激光器的降解
- 作者：J-M Bonard;J-D Ganiere;D Herve;L Vanzetti;J J Paggel;L Sorba;E Molva;A Franciosi;Institute of Physics
- 会议名称：《Royal Microscopical Society conference on microcopy of semiconducting materials》 | 1997年