In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Lingaparthi R.; Dharmarasu N.; Radhakrishnan K.; Agrawal M.

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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

机译：使用Algan / Aln / GaN应力缓解层对高电子迁移率晶体管应用的Si衬底上生长的GaN缓冲器结构特征的原位应力进化及其相关性

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《Thin Solid Films》 |2020年第31期|138128.1-138128.8|共8页
作者
Lingaparthi R.; Dharmarasu N.; Radhakrishnan K.; Agrawal M.;
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Nanyang Technol Univ Sch Elect & Elect Engn NOVITAS Nanoelect Ctr Excellence Singapore 639798 Singapore;

Nanyang Technol Univ Temasek Labs Singapore 637553 Singapore;

Nanyang Technol Univ Sch Elect & Elect Engn NOVITAS Nanoelect Ctr Excellence Singapore 639798 Singapore|Nanyang Technol Univ Temasek Labs Singapore 637553 Singapore;

Nanyang Technol Univ Sch Elect & Elect Engn NOVITAS Nanoelect Ctr Excellence Singapore 639798 Singapore;

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1. Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates [J] . Seshadri Kolluri, Stacia Keller, David Brown, Journal of Applied Physics . 2010,第7期

机译：AlN中间层对在邻近衬底上生长的N极AlGaN / GaN金属-绝缘体-半导体-高电子迁移率晶体管的各向异性电子迁移率和器件特性的影响
2. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
3. Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate [J] . Ko Kwangse, Lee Kyeongjae, So Byeongchan, Japanese journal of applied physics . 2017,第1期

机译：4H-SiC衬底上生长的AlGaN / GaN高电子迁移率晶体管在GaN缓冲层中的Mg补偿效应
4. Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique [C] . Ghosh Kankat, Das Sudipta, Ganguly S., 2015 Third International Conference on Computer, Communication, Control and Information Technology . 2015

机译：GaN缓冲层厚度对等离子辅助分子束外延技术在Si（111）衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations [O] . H.-P. Lee, J. Perozek, L. D. Rosario, -1

机译：使用不同缓冲层配置的200mm硅（111）衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
7. Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate [O] . Pozina, Galia, Hemmingsson, Carl, Forsberg, Urban, 2008

机译：在4H-SiC衬底上生长的AlGaN / AlN / GaN高电子迁移率晶体管结构的时间分辨光致发光特性

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

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