Porous SnO_2 sputtered films with high H_2 sensitivity at low operation temperature

摘要

Undoped and Pd-doped SnO_2 films were deposited at various substrate temperatures and discharge gas pressures using reactive magnetron sputtering. Structural factors of the films, such as crystallite size, grain size, and film density, were systematically investigated. The main objectives of this study are to clarify the operation temperature dependence of the H_2 sensitivity of these films as well as to clarify the dominant structural factor in the determination of the sensitivity. The operation temperature at which the sensitivity defined by (R_a-R_g)/R_g, where R_a and R_g are the resistances before and after exposure to H_2, showed a maximum decreased with decreasing film density. The highest sensitivity of 4470 was obtained for a Pd-doped film with the lowest density of 3.1 g/cm~3 at 100 ℃. It was found that the sensitivity correlated with film density rather than with crystallite size and grain size. The high sensitivity of a Pd-doped porous film at a low temperature was discussed in relation to the Schottky-bamer-limited transport as well as the chemical and electronic effects of Pd.