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Microstructural, photocatalysis and electrochemical investigations on CeTi_2O_6 thin films

机译:CeTi_2O_6薄膜的微结构,光催化和电化学研究

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The properties of sol-gel derived CeTi_2O_6 thin films deposited using a solution of cerium chloride heptahydrate and titanium propoxide in ethanol are discussed. The effect of annealing temperature on structural, optical, photoluminescence, photocatalysis and electrochemical characteristics has been examined. Lowest annealing temperature for the formation of crystalline CeTi_2O_6 phase in these samples is identified as 580 ℃. The optical transmittance of the films is observed to be independent of the annealing temperature. The optical energy bandgap of the 600 ℃ annealed film for indirect transition is influenced by the presence of anatase phase of TiO_2 in its structure. Fourier transform infrared spectroscopy investigations have evidenced increased bond strength of the Ti-O-Ti network in the films as a function of annealing temperature. The photoluminescence intensity of the films has shown dependence on the annealing temperature with the films fired at 450 ℃ exhibiting the maximum photoluminescence activity. The decomposition of methyl orange and eosin (yellow) under UV-visible light irradiation in the presence of crystalline CeTi_2O_6 films shows the presence of photoactivity in these films. The photocatalytic response of CeTi_2O_6 films is found to be superior to the TiO_2 films. In comparison to crystalline films, the amorphous films have shown superior electrochemical characteristics. The 500 ℃ annealed amorphous films have exhibited the most appropriate properties for incorporation in electrochromic devices comprising tungsten oxide as the primary electrochromic electrode.
机译:讨论了由七水合氯化铈和丙氧化钛在乙醇中沉积的溶胶-凝胶衍生的CeTi_2O_6薄膜的性能。研究了退火温度对结构,光学,光致发光,光催化和电化学特性的影响。这些样品中形成CeTi_2O_6晶相的最低退火温度为580℃。观察到膜的透光率与退火温度无关。 TiO_2结构中存在锐钛矿相影响了600℃退火膜间接跃迁的光能带隙。傅里叶变换红外光谱研究表明,薄膜中Ti-O-Ti网络的键合强度随退火温度的升高而增加。薄膜的光致发光强度与退火温度有关,在450℃烧制的薄膜具有最大的光致发光活性。在结晶CeTi_2O_6薄膜的存在下,在紫外-可见光照射下甲基橙和曙红的分解(黄色)表明这些膜中存在光活性。发现CeTi_2O_6薄膜的光催化响应优于TiO_2薄膜。与结晶膜相比,非晶膜显示出优异的电化学特性。经过500℃退火的非晶膜具有最合适的性能,可用于以氧化钨为主要电致变色电极的电致变色器件中。

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