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机译:反应粒子束辅助化学气相沉积合成非晶硅薄膜的性能
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;
Department of Display and Semiconductor Physics, Korea University, Chungnam 339-700, Republic of Korea;
Department of Display and Semiconductor Physics, Korea University, Chungnam 339-700, Republic of Korea;
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Republic of Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;
amorphous silicon; reactive particle beam; ICPCVD; reflector; bias voltage;
机译:等离子体源功率对反应性粒子束辅助化学气相沉积硅薄膜纳米晶化的影响
机译:反射器偏压对反应性粒子束辅助化学气相沉积硅薄膜纳米晶化的影响
机译:直接离子束沉积和等离子体辅助化学气相沉积合成的非晶a-CH(:N)薄膜的性能
机译:气溶胶辅助化学气相沉积沉积非晶碳薄膜的光电性能
机译:通过聚合物源化学气相沉积合成的非晶碳化硅和碳氮化硅薄膜的表征。机械结构和金属界面性能
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:大气压等离子体化学气相沉积的非晶硅薄膜的高速率沉积。 (第一个报告)。具有旋转电极的大气压等离子体CVD装置的设计与生产。